2SB1386 datasheet(4/6 Pages) WEITRON

Part #	2SB1386

Description	Epitaxial Planar Transistor PNP Silicon

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Manufacturer	WEITRON [Weitron Technology]

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2SB1386

WEITRON

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FIG.7 Collector-Emitter Saturation

Voltage vs. Collector Current

B

C

COLLECTOR CURRENT : IC (A)

-1 -2

-5 -10

-0.01-0.02

-0.1 -0.2 -0.5

-0.05

-2m -5m

-0.01

-2

-1

-0.5

-0.2

-0.1

-0.05

-0.02

-5

FIG.8 Collector-Emitter Saturation

Voltage vs. Collector Current

25 C

COLLECTOR CURRENT : IC (A)

-1 -2

-5 -10

-0.01-0.02

-0.1 -0.2 -0.5

-0.05

-2m -5m

-0.01

-2

-1

-0.5

-0.2

-0.1

-0.05

-0.02

-5

FIG.9 Collector-Emitter Saturation

Voltage vs. Collector Current

COLLECTOR CURRENT : IC(A)

-1 -2

-5 -10

-0.01-0.02

-0.1-0.2 -0.5

-0.05

-2m -5m

-0.01

-2

-1

-0.5

-0.2

-0.1

-0.05

-0.02

-5

COLLECTOR CURRENT : IC (A)

-1 -2

-5 -10

-0.01-0.02

-0.1-0.2 -0.5

-0.05

-2m -5m

-0.01

-2

-1

-0.5

-0.2

-0.1

-0.05

-0.02

-5

FIG.10 Collector-Emitter Saturation

Voltage vs. Collector Current

FIG.11 Gain Bandwidth Product

vs. Emitter Current

EMITTER CURRENT : IE(mA)

1

2

5

10

50 100 200

500

20

50

100

200

500

1000

10

5

2

1

1000

FIG.12 Collector Output Capacitance

vs. Collector-Base Voltage

COLLECTOR TO BASE VOLTAGE : VCB(V)

-0.1 -0.2

-0.5

-1

-2

-5

-10

-20

-50

1000

500

200

100

50

10

20

T =100 C

I /I =10

C

B

I /I =50

C

B

I /I =30

a

25 C

T =100 C

a

25 C

C

B

I /I =40

25 C

T =100 C

a

T =100 C

a

25 C

I =0A

f=1MHz

CE

V

=6V

E

T =25 C

a

T =25 C

a

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