Handling Procedures
Stresses above these listed maximum ratings may cause
permanent damage to the device. Exposure beyond specified
operating conditions may affect device reliability or cause
malfunction.
2
Absolute Maximum Ratings
Table 1
Parameter
Voltage at V
to V
DD
SS
Min. voltage at RES or RES
Max. voltage at RES or RES
Storage temperature range
V
DD
V
min
V
max
T
STO
-0.3V to+10 V
V
- 0.3 V
SS
-65 to +150
O
OC
V
+ 0.3 V
DD
Symbol
Conditions
This device has built-in protection against high static voltages
or electric fields; however, anti-static precautions must be taken
as for any other CMOS component. Unless otherwise specified,
proper operation can only occur when all terminal voltages are
kept within the supply voltage range.
1)
The maximum operating temperature is confirmed by
sampling at initial device qualification.
Operating Conditions
T
A
-40
1
+125
OC
V
8
V
DD
Table 2
Parameter
Symbol Min. Typ . Max. Units
1)
Operating temperature
Positive supply voltage
Electrical Characteristics
O
T = -40 to +85 C, unless otherwise specified
A
1) RES or RES open
2) Only for Open drain versions
I
DD
V
HYS
V
OL
V
OL
V
OL
V
OH
V
OH
I
LEAK
V
= 2 V
DD
V
= 5 V, I
= 8 mA
DD
OL
V
= 5.5 V
DD
1)
Supply current
Threshold Low Voltage
Threshold hysteresis
RES Output Low Level
RES Output High Level
2)
Output leakage current
mA
mA
mA
V
V
V
V
V
V
V
mV
mV
mV
mV
V
V
mV
mA
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Units
I
DD
V
= 5 V
DD
V
= 8 V
DD
Version: A,G,M
Version: B,H,N
Version: C,I,O
Version: D,J,P
Version: E,K,Q
Version: F,L,R
I
DD
V
THlow
V
THlow
Max.
at 25
OC
Min.
at 25
OC
V
OH
V
= 3 V, I
= 4 mA
DD
OL
V
= 1 V, I
= 50
mA
DD
OL
V
= 5 V, I = -8 mA
DD
OH
V
= 3 V, I
= -4 mA
DD
OH
V
= 1 V, I
= -100
mA
DD
OH
1.77
2.09
2.48
3.11
3.55
4.05
5.58
4.3
2.3
850
1.84
2.18
2.59
3.23
3.70
4.22
5.79
1.5
3.0
5.2
1.95
2.32
2.73
3.42
3.88
4.42
6.10
25
175
140
20
4.5
2.6
950
0.05
2.1
3.9
6.8
2.04
2.41
2.86
3.59
4.08
4.67
6.42
3.1
5.7
10.0
2.17
2.55
3.03
3.80
4.32
4.95
6.82
400
300
90
1
Table 3
Threshold High Voltage
V
THlow
V
THlow
V
THlow
V
THlow
V
THhigh
Timing Characteristics
O
V
= 5.0 V, T = -40 to +85 C, unless otherwise specified
DD
A
t
POR
t
SEN high
for V
= 5 V to 7 V in 5
ms
DD
25
18
20
20
22
Power on reset time
Sensitivity around V
THhigh
ms
ms
ms
Table 4
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Units
Reaction time around V
THhigh
t
SEN low
3) Tested on versions with V
higher than 3 V
THlow
for V
= 5 V to 3 V in 5
ms
DD
50
0.8 t
Rhigh
0.8 t
Rlow
55
75
75
90
150
3)
Sensitivity around V
THlow
3)
Reaction time around V
THlow
T
Rlow
T
Rhigh
for V
= 5 V to 7 V in 5
ms
DD
for V
= 5 V to 3 V in 5
ms
DD
ms
ms
V6310
R
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