IS62VV25616LL-85TI datasheet(3/10 Pages) ISSI

Part #	IS62VV25616LL-85TI

Description	256K x 16 LOW VOLTAGE, 1.8V ULTRA LOW POWER CMOS STATIC RAM

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Manufacturer	ISSI [Integrated Silicon Solution, Inc]

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3 / 10 page

Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774

3

Rev. B

08/07/02

IS62VV25616LL

ISSI®

DC ELECTRICAL CHARACTERISTICS (Over Operating Range)

Symbol

Parameter

Test Conditions

Min.

Max.

Unit

VOH

Output HIGH Voltage

IOH = -0.1 mA

1.4

—

V

VOL

Output LOW Voltage

IOL = 0.1 mA

—

0.2

V

VIH

Input HIGH Voltage

1.4

VDD + 0.2

V

VIL(1)

Input LOW Voltage

–0.3

0.4

V

ILI

Input Leakage

GND

≤ VIN ≤ VDD

–1

1

µA

ILO

Output Leakage

GND

≤ VOUT ≤ VDD, Outputs Disabled

–1

1

µA

Notes:

1. VIL (min.) = –1.0V for pulse width less than 10 ns.

ABSOLUTE MAXIMUM RATINGS(1)

Symbol

Parameter

Value

Unit

VTERM

Terminal Voltage with Respect to GND

–0.2 to VDD+0.25

V

VDD

Vdd Related to GND

–0.2 to +2.5

V

TSTG

Storage Temperature

–65 to +150

°C

PT

Power Dissipation

1.0

W

Note:

1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is

a stress rating only and functional operation of the device at these or any other conditions above those indicated in the

operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods

may affect reliability.

OPERATING RANGE

Range

Ambient Temperature

VDD

Commercial

0°C to +70°C

1.7V - 2.25V

Industrial

–40°C to +85°C

1.7V - 2.25V

CAPACITANCE(1)

Symbol

Parameter

Conditions

Max.

Unit

CIN

Input Capacitance

VIN = 0V

8

pF

COUT

Input/Output Capacitance

VOUT = 0V

10

pF

Note:

1. Tested initially and after any design or process changes that may affect these parameters.

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IS62VV25616LL-85TI Datasheet(PDF) 3 Page - Integrated Silicon Solution, Inc

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