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IS45S16400C1-7TLA1 Datasheet(PDF) 11 Page - Integrated Silicon Solution, Inc |
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IS45S16400C1-7TLA1 Datasheet(HTML) 11 Page - Integrated Silicon Solution, Inc |
11 / 55 page IS45S16400C1 ISSI® Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774 11 Rev. C 10/25/05 ABSOLUTE MAXIMUM RATINGS(1) Symbol Parameters Rating Unit VDD MAX Maximum Supply Voltage –0.5 to +4.6 V VDDQ MAX Maximum Supply Voltage for Output Buffer –0.5 to +4.6 V VIN Input Voltage –0.5 to VDDQ + 0.5 V VOUT Output Voltage –1.0 to VDDQ + 0.5 V PD MAX Allowable Power Dissipation 1 W ICS Output Shorted Current 50 mA TOPR Operating Temperature A 0 to +70 °C A1 –40 to +85 TSTG Storage Temperature –65 to +150 °C DC RECOMMENDED OPERATING CONDITIONS(2) (A: At TA = 0°C to +70°C, A1: At TA = -40°C to +85°C) Symbol Parameter Min. Typ. Max. Unit VDD, VDDQ Supply Voltage 3.0 3.3 3.6 V VIH Input High Voltage(3) 2.0 — VDD + 0.3 V VIL Input Low Voltage(4) -0.3 — +0.8 V CAPACITANCE CHARACTERISTICS(1,2) (At TA = 0 to +25°C, VDD = VDDQ = 3.3 ± 0.3V, f = 1 MHz) Symbol Parameter Typ. Max. Unit CIN Input Capacitance: Address and Control — 3.8 pF CCLK Input Capacitance: (CLK) — 3.5 pF CI/O Data Input/Output Capacitance: I/O0-I/O15 — 6.5 pF Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. All voltages are referenced to GND. 3. VIH(max) = VDDQ + 2.0V with a pulse width < 3ns. 4. VIL(min) = GND - 2.0V with a pulse width < 3ns. |
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