DS2030AB-100 datasheet(3/12 Pages) MAXIM

Part #	DS2030AB-100

Description	Single-Piece 256kb Nonvolatile SRAM

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Manufacturer	MAXIM [Maxim Integrated Products]

Direct Link	https://www.maximintegrated.com/en.html

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DS2030Y/AB Single-Piece 256kb

Nonvolatile SRAM

_____________________________________________________________________

3

POWER-DOWN/POWER-UP TIMING

(TA = -40

°C to +85°C)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

VCC Fail Detect to CE and WE Inactive

tPD

(Note 7)

1.5

µs

VCC Slew from VTP to 0V

tF

150

µs

VCC Slew from 0V to VTP

tR

150

µs

VCC Valid to CE and WE Inactive

tPU

2ms

VCC Valid to End of Write Protection

tREC

125

ms

VCC Fail Detect to RST Active

tRPD

(Note 1)

3.0

µs

VCC Valid to RST Inactive

tRPU

(Note 1)

225

350

525

ms

DATA RETENTION

(TA = +25

°C)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Expected Data-Retention Time (Per Charge)

tDR

(Note 8)

2

3

years

AC ELECTRICAL CHARACTERISTICS

(VCC = 5V ±5% for DS2030AB, VCC = 5V ±10% for DS2030Y, TA = -40

°C to +85°C.)

DS2030AB-70

DS2030Y-70

DS2030AB-100

DS2030Y-100

PARAMETER

SYMBOL

CONDITIONS

MIN

MAX

MIN

MAX

UNITS

Read Cycle Time

tRC

70

100

ns

Access Time

tACC

70

100

ns

OE to Output Valid

tOE

35

50

ns

CE to Output Valid

tCO

70

100

ns

OE or CE to Output Active

tCOE

(Note 2)

5

ns

Output High Impedance from

Deselection

tOD

(Note 2)

25

35

ns

Output Hold from Address Change

tOH

55

ns

Write Cycle Time

tWC

70

100

ns

Write Pulse Width

tWP

(Note 3)

55

75

ns

Address Setup Time

tAW

00

ns

tWR1

(Note 4)

5

Write Recovery Time

tWR2

(Note 5)

15

ns

Output High Impedance from WE

tODW

(Note 2)

25

35

ns

Output Active from WE

tOEW

(Note 2)

5

ns

Data Setup Time

tDS

(Note 6)

30

40

ns

tDH1

(Note 4)

0

Data Hold Time

tDH2

(Note 5)

10

ns

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DS2030AB-100 Datasheet(PDF) 3 Page - Maxim Integrated Products

DS2030AB-100 Datasheet(HTML) 3 Page - Maxim Integrated Products

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