Electronic Components Datasheet Search
  English  ▼
ALLDATASHEET.COM

X  

IS62LV12816LL-55B Datasheet(PDF) 7 Page - Integrated Circuit Solution Inc

Part # IS62LV12816LL-55B
Description  128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
Download  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IS62LV12816LL-55B Datasheet(HTML) 7 Page - Integrated Circuit Solution Inc

Back Button IS62LV12816LL-55B Datasheet HTML 2Page - Integrated Circuit Solution Inc IS62LV12816LL-55B Datasheet HTML 3Page - Integrated Circuit Solution Inc IS62LV12816LL-55B Datasheet HTML 4Page - Integrated Circuit Solution Inc IS62LV12816LL-55B Datasheet HTML 5Page - Integrated Circuit Solution Inc IS62LV12816LL-55B Datasheet HTML 6Page - Integrated Circuit Solution Inc IS62LV12816LL-55B Datasheet HTML 7Page - Integrated Circuit Solution Inc IS62LV12816LL-55B Datasheet HTML 8Page - Integrated Circuit Solution Inc IS62LV12816LL-55B Datasheet HTML 9Page - Integrated Circuit Solution Inc IS62LV12816LL-55B Datasheet HTML 10Page - Integrated Circuit Solution Inc  
Zoom Inzoom in Zoom Outzoom out
 7 / 10 page
background image
Integrated Circuit Solution Inc.
7
SR020-0C
IS62LV12816L
IS62LV12816LL
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range)
-55
-70
-100
Symbol Parameter
Min. Max.
Min. Max.
Min.
Max
Unit
tWC
Write Cycle Time
55
—
70
—
100
—
ns
tSCE
CE to Write End
50
—
65
—
80
—
ns
tAW
Address Setup Time to Write End
50
—
65
—
80
—
ns
tHA
Address Hold from Write End
0
—
0
—
0
—
ns
tSA
Address Setup Time
0
—
0
—
0
—
ns
tPWB
LB, UB Valid to End of Write
45
—
60
—
80
—
ns
tPWE
WE Pulse Width
45
—
60
—
80
—
ns
tSD
Data Setup to Write End
25
—
30
—
40
—
ns
tHD
Data Hold from Write End
0
—
0
—
0
—
ns
tHZWE! WE LOW to High-Z Output
—
30
—
30
—
40
ns
tLZWE! WE HIGH to Low-Z Output
5
—
5
—
5
—
ns
Notes:
1. Test conditions assume signal transition times of 3 ns or less, timing reference levels of 1.3V, input pulse levels of 0.4V to 2.2V
and output loading specified in Figure 1.
2. The internal write time is defined by the overlap of CE LOW, and UB or LB, and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
3. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
DATA UNDEFINED
t WC
VALID ADDRESS
t SCS
t PWE1
t PWE2
t AW
t HA
HIGH-Z
t PWB
t HD
t SA
t HZWE
ADDRESS
CS
UB, LB
WE
DOUT
DIN
DATAIN VALID
t LZWE
t SD
AC WAVEFORMS
WRITE CYCLE NO. 1(1,2) (CS, Controlled, OE = HIGH or LOW)
Notes:
1. WRITE is an internally generated signal asserted during an overlap of the LOW states on the CS and WE inputs and at least
one of the LB and UB inputs being in the LOW state.
2. WRITE = (CS) [ (
LB) = (UB) ] (WE).


Similar Part No. - IS62LV12816LL-55B

ManufacturerPart #DatasheetDescription
logo
Integrated Silicon Solu...
IS62LV12816L-100B ISSI-IS62LV12816L-100B Datasheet
83Kb / 9P
   128K x 16 CMOS STATIC RAM
IS62LV12816L-100BI ISSI-IS62LV12816L-100BI Datasheet
83Kb / 9P
   128K x 16 CMOS STATIC RAM
IS62LV12816L-100T ISSI-IS62LV12816L-100T Datasheet
83Kb / 9P
   128K x 16 CMOS STATIC RAM
IS62LV12816L-100TI ISSI-IS62LV12816L-100TI Datasheet
83Kb / 9P
   128K x 16 CMOS STATIC RAM
IS62LV12816L-120B ISSI-IS62LV12816L-120B Datasheet
83Kb / 9P
   128K x 16 CMOS STATIC RAM
More results

Similar Description - IS62LV12816LL-55B

ManufacturerPart #DatasheetDescription
logo
Integrated Silicon Solu...
IS62WV12816ALL ISSI-IS62WV12816ALL Datasheet
112Kb / 17P
   128K x 16 LOW VOLTAGE ULTRA LOW POWER CMOS STATIC RAM
IS65WV12816ALL ISSI-IS65WV12816ALL Datasheet
133Kb / 19P
   128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62LV12816BLL ISSI-IS62LV12816BLL Datasheet
94Kb / 10P
   128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV12816DALL ISSI-IS62WV12816DALL Datasheet
429Kb / 17P
   128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
logo
Integrated Circuit Solu...
IC62LV12816L ICSI-IC62LV12816L Datasheet
139Kb / 10P
   128K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
logo
Taiwan Memory Technolog...
T15V2M16B TMT-T15V2M16B Datasheet
93Kb / 12P
   128K X 16 LOW POWER CMOS STATIC RAM?
logo
Integrated Silicon Solu...
IS62WV1288ALL ISSI-IS62WV1288ALL Datasheet
111Kb / 15P
   128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
IS62WV1288DALL ISSI-IS62WV1288DALL Datasheet
468Kb / 16P
   128K x 8 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
logo
Pyramid Semiconductor C...
P3C1024L PYRAMID-P3C1024L Datasheet
114Kb / 10P
   ULTRA LOW POWER 128K x 8 CMOS STATIC RAM
logo
Integrated Silicon Solu...
IS62WV51216ALL ISSI-IS62WV51216ALL Datasheet
129Kb / 16P
   512K x 16 LOW VOLTAGE, ULTRA LOW POWER CMOS STATIC RAM
More results


Html Pages

1 2 3 4 5 6 7 8 9 10


Datasheet Download

Go To PDF Page


Link URL




Privacy Policy
ALLDATASHEET.COM
Does ALLDATASHEET help your business so far?  [ DONATE ] 

About Alldatasheet   |   Advertisement   |   Datasheet Upload   |   Contact us   |   Privacy Policy   |   Link Exchange   |   Manufacturer List
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com