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IC62LV1024AL-45H Datasheet(PDF) 9 Page - Integrated Circuit Solution Inc

Part # IC62LV1024AL-45H
Description  128K x 8 Ultra Low Power and Low VCC SRAM
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Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IC62LV1024AL-45H Datasheet(HTML) 9 Page - Integrated Circuit Solution Inc

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Integrated Circuit Solution Inc.
9
LPSR017-0A 09/13/2001
IC62LV1024AL
IC62LV1024ALL
WRITE CYCLE NO. 2 (
CE1
CE1
CE1
CE1
CE1, CE2 Controlled)(1,2)
HIGH-Z
DATA UNDEFINED
DATA-IN VALID
tWC
tSCE1
tSA
tHA
tSCE2
tPWE(4)
tAW
tHZWE
tSD
tHD
tLZWE
ADDRESS
DIN
CE1
CE2
WE
DOUT
Notes:
1. The internal write time is defined by the overlap of
CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
2. I/O will assume the High-Z state if
OE = VIH.
DATA RETENTION SWITCHING CHARACTERISTICS
Symbol
Parameter
TestCondition
Min.
Max.
Unit
VDR
Vcc for Data Retention
See Data Retention Waveform
2.0
3.3
V
IDR
Data Retention Current
Vcc = 2.0V,
CE1
≥ Vcc – 0.2V
Com. (-L)
30
µA
Com. (-LL)
5
µA
Ind. (-L)
50
µA
Ind. (-LL)
10
µA
tSDR
Data Retention Setup Time
See Data Retention Waveform
0
ns
tRDR
Recovery Time
See Data Retention Waveform
tRC
—ns
DATA RETENTION WAVEFORM (
CE1
CE1
CE1
CE1
CE1 Controlled)
VCC
CE1
≥ VCC - 0.2V
tSDR
tRDR
VDR
CE1
GND
3.0V
2.2V
Data Retention Mode


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