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IC62VV1008LL-100B Datasheet(PDF) 8 Page - Integrated Circuit Solution Inc

Part # IC62VV1008LL-100B
Description  1 M x 8 bit Low Voltage and Ultra Low Power CMOS Static RAM
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Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IC62VV1008LL-100B Datasheet(HTML) 8 Page - Integrated Circuit Solution Inc

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Integrated Circuit Solution Inc.
LPSR026-0A 9/4/2002
IC62VV1008L
IC62VV1008LL
-55
-70
-100
Symbol Parameter
Min.
Max.
Min.
Max.
Min.
Max
Unit
tWC
Write Cycle Time
55
70
100
ns
tSCE1
CE1 to Write End
50
65
80
ns
tSCE2
CE2 to Write End
50
65
80
ns
tAW
Address Setup Time to Write End
50
65
80
ns
tHA
Address Hold from Write End
0
0
0
ns
tSA
Address Setup Time
0
0
0
ns
tPWE(4)
WE Pulse Width
45
55
80
ns
tSD
Data Setup to Write End
25
30
40
ns
tHD
Data Hold from Write End
0
0
0
ns
tHZWE(3) WE LOW to High-Z Output
30
30
40
ns
tLZWE(3) WE HIGH to Low-Z Output
5
5
5
ns
Notes:
1. Test conditions assume signal transition times of 5 ns or less, input pulse levels of 0.4V to 1.4V and output loading specified in
Figure 1.
2. Tested with the load in Figure 2. Transition is measured ±500 mV from steady-state voltage. Not 100% tested.
3. The internal write time is defined by the overlap of CE1 LOW , CE2 HIGH and
WE LOW. All signals must be in valid states to
initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the
rising or falling edge of the signal that terminates the Write.
4. Tested with
OE HIGH.
WRITE CYCLE SWITCHING CHARACTERISTICS(1,2) (Over Operating Range, Standard and Low Power)
AC WAVEFORMS
WRITE CYCLE NO. 1 (WE Controlled)(1,2)
DATA-IN VALID
DATA UNDEFINED
tWC
tSCE1
tSCE2
tAW
tHA
tPWE
tHZWE
HIGH-Z
tLZWE
tSA
tSD
tHD
ADDRESS
CE1
CE2
WE
DOUT
DIN


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