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IC61SF6432-10TQ Datasheet(PDF) 2 Page - Integrated Circuit Solution Inc

Part # IC61SF6432-10TQ
Description  64K x 32 Flow Through Sync. SRAM
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Manufacturer  ICSI [Integrated Circuit Solution Inc]
Direct Link  http://www.icsi.com.tw
Logo ICSI - Integrated Circuit Solution Inc

IC61SF6432-10TQ Datasheet(HTML) 2 Page - Integrated Circuit Solution Inc

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IC61SF6432
2
Integrated Circuit Solution Inc.
SSR017-0A
09/13/2001
ICSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors
which may appear in this publication. © Copyright 2000, Integrated Circuit Solution Inc.
FEATURES
• Fast access time: 9 ns, 10 ns
• Internal self-timed write cycle
• Individual Byte Write Control and Global Write
• Clock controlled, registered address, data and
control
• Pentium™ or linear burst sequence control
using MODE input
• Three chip enables for simple depth expansion
and address pipelining
• Common data inputs and data outputs
• Power-down control by ZZ input
• JEDEC 100-Pin LQFP and PQFP package
• Single +3.3V power supply
• Two Clock enables and one Clock disable to
eliminate multiple bank bus contention.
• Control pins mode upon power-up:
– FT in pipeline mode
– MODE in interleave burst mode
– ZZ in normal operation mode
These control pins can be connected to GNDQ
or VCCQ to alter their power-up state
• Industrial temperature available
DESCRIPTION
The
ICSI IC61SF6432 is a high-speed, low-power synchronous
static RAM designed to provide a burstable, high-performance,
secondary cache for the Pentium™, 680X0™, and PowerPC™
microprocessors. It is organized as 65,536 words by 32 bits,
fabricated with
ICSI's advanced CMOS technology. The de-
vice integrates a 2-bit burst counter, high-speed SRAM core,
and high-drive capability outputs into a single monolithic circuit.
All synchronous inputs pass through registers controlled by a
positive-edge-triggered single clock input.
Write cycles are internally self-timed and are initiated by the
rising edge of the clock input. Write cycles can be from one to
four bytes wide as controlled by the write control inputs.
Separate byte enables allow individual bytes to be written.
BW1 controls DQ1-DQ8, BW2 controls DQ9-DQ16, BW3
controls DQ17-DQ24,
BW4 controls DQ25-DQ32, conditioned
by
BWE being LOW. A LOW on GW input would cause all bytes
to be written.
Bursts can be initiated with either
ADSP (Address Status
Processor) or
ADSC (Address Status Cache Controller) input
pins. Subsequent burst addresses can be generated internally
by the IC61SF6432 and controlled by the
ADV (burst address
advance) input pin.
Asynchronous signals include output enable (
OE), sleep mode
input (ZZ), clock (CLK) and burst mode input (MODE). A HIGH
input on the ZZ pin puts the SRAM in the power-down state.
When ZZ is pulled LOW (or no connect), the SRAM normally
operates after three cycles of the wake-up period. A LOW
input, i.e., GNDQ, on MODE pin selects LINEAR Burst. A VCCQ
(or no connect) on MODE pin selects INTERLEAVED Burst.
64K x 32 SYNCHRONOUS
FLOW-THROUGH STATIC RAM


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