ELECTRICAL CHARACTERISTICS: (T
C = 25°C unless otherwise noted)
ELECTRICAL CHARACTERISTICS: (T
C = 25°C unless otherwise noted)
STATIC P/N OMD400 (400V)
STATIC P/N OMD500 (500V)
Parameter
Min. Typ. Max. Units Test Conditions
Parameter
Min. Typ. Max. Units Test Conditions
BV
DSS
Drain-Source Breakdown
400
V
V
GS = 0,
BV
DSS
Drain-Source Breakdown
500
V
V
GS = 0,
Voltage
I
D = 250 mA
Voltage
I
D = 250 mA
V
GS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mAVGS(th)
Gate-Threshold Voltage
2.0
4.0
V
V
DS = VGS, ID = 250 mA
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS = +20 V
I
GSSF
Gate-Body Leakage Forward
100
nA
V
GS = +20 V
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS = - 20 V
I
GSSR
Gate-Body Leakage Reverse
- 100
nA
V
GS = - 20 V
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
I
DSS
Zero Gate Voltage Drain
0.1
0.25
mA
V
DS = Max. Rat., VGS = 0
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
Current
0.2
1.0
mA
V
DS = 0.8 Max. Rat., VGS = 0,
T
C = 125° C
T
C = 125° C
I
D(on)
On-State Drain Current1
15
A
V
DS
2 V
DS(on), VGS = 10 V
I
D(on)
On-State Drain Current1
13
A
V
DS
2 V
DS(on), VGS = 10 V
V
DS(on)
Static Drain-Source On-State
2.0
2.8
V
V
GS = 10 V, ID = 8.0 A
V
DS(on)
Static Drain-Source On-State
2.1
3.0
V
V
GS = 10 V, ID = 7.0 A
Voltage1
Voltage1
R
DS(on)
Static Drain-Source On-State
0.30
.35
V
GS = 10 V, ID = 8.0 A
R
DS(on)
Static Drain-Source On-State
0.35
0.43
V
GS = 10 V, ID = 7.0 A
Resistance1
Resistance1
R
DS(on)
Static Drain-Source On-State
.60
.70
V
GS = 10 V, ID = 8.0 A,
R
DS(on)
Static Drain-Source On-State
0.66
0.88
V
GS = 10 V, ID = 7.0 A,
Resistance1
T
C = 125 C
Resistance1
T
C = 125 C
DYNAMIC
DYNAMIC
g
fs
Forward Transductance1
6.0
9.6
S(W )
V
DS
2 V
DS(on), ID = 8.0 A
g
fs
Forward Transductance1
6.0
7.2
S(W )
V
DS
2 V
DS(on), ID = 7.0 A
C
iss
Input Capacitance
2900
pF
V
GS = 0
C
iss
Input Capacitance
2600
pF
V
GS = 0
C
oss
Output Capacitance
450
pF
V
DS = 25 V
C
oss
Output Capacitance
280
pF
V
DS = 25 V
C
rss
Reverse Transfer Capacitance
150
pF
f = 1 MHz
C
rss
Reverse Transfer Capacitance
40
pF
f = 1 MHz
t
d(on)
Turn-On Delay Time
30
ns
V
DD = 200 V, ID @ 8.0 A
t
d(on)
Turn-On Delay Time
30
ns
V
DD = 210 V, ID @ 7.0 A
t
r
Rise Time
40
ns
R
g =5.0 W , VGS =10V
t
r
Rise Time
46
ns
R
g = 5.0 W , VGS = 10 V
t
d(off)
Turn-Off Delay Time
80
ns
t
d(off)
Turn-Off Delay Time
75
ns
t
f
Fall Time
30
ns
t
f
Fall Time
31
ns
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
BODY-DRAIN DIODE RATINGS AND CHARACTERISTICS
I
S
Continuous Source Current
- 15
A
Modified MOSPOWER
I
S
Continuous Source Current
- 13
A
Modified MOSPOWER
(Body Diode)
symbol showing
(Body Diode)
symbol showing
I
SM
Source Current1
- 60
A
the integral P-N
I
SM
Source Current1
- 52
A
the integral P-N
(Body Diode)
Junction rectifier.
(Body Diode)
Junction rectifier.
V
SD
Diode Forward Voltage1
- 1.6
V
T
C = 25 C, IS = -15 A, VGS = 0
V
SD
Diode Forward Voltage1
- 1.4
V
T
C = 25 C, IS = -13 A, VGS = 0
t
rr
Reverse Recovery Time
600
ns
T
J = 100 C, IF = IS,
t
rr
Reverse Recovery Time
700
ns
T
J = 150 C, IF = IS,
dl
F/ds = 100 A/ms
dl
F/ds = 100 A/ms
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
1 Pulse Test: Pulse Width 300msec, Duty Cycle
2%.
(MOSFET switching times are
essentially independent of
operating temperature.)
(MOSFET switching times are
essentially independent of
operating temperature.)
G
D
S
G
D
S
English ▼
English
Chinese
German
Japanese
Russian
Korean
Spanish
French
Italian
Portuguese
Polish
Vietnamese
Indian
Mexican
British
New Zealand
