MRF18085A MRF18085AR3 MRF18085ALSR3

2

MOTOROLA RF DEVICE DATA

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Drain–Source Breakdown Voltage

65

—

—

Vdc

Zero Gate Voltage Drain Current

—

—

10

µAdc

Gate–Source Leakage Current

—

—

1

µAdc

ON CHARACTERISTICS

Gate Threshold Voltage

2

—

4

Vdc

Gate Quiescent Voltage

2.5

3.9

4.5

Vdc

Drain–Source On–Voltage

—

0.15

—

Vdc

Forward Transconductance

—

6.0

—

S

DYNAMIC CHARACTERISTICS

Reverse Transfer Capacitance (1)

—

3.6

—

pF

FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system)

Common–Source Amplifier Power Gain @ 85 W (2)

13.5

15

—

dB

Drain Efficiency @ 85 W (2)

η

48

52

—

%

Input Return Loss @ 85 W (2)

IRL

—

–12

–9

dB

P1dB

83

90

—

Watts

Output Mismatch Stress @ P1dB

VSWR = 5:1, All Phase Angles at Frequency of Tests)

Ψ

No Degradation In Output Power

Before and After Test

(1) Part is internally matched both on input and output.

(2) To meet application requirements, Motorola test fixtures have been designed to cover the full GSM1800 band, ensuring batch–to–batch

consistency.