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FBA75CA45 Datasheet(PDF) 1 Page - SanRex Corporation |
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FBA75CA45 Datasheet(HTML) 1 Page - SanRex Corporation |
1 / 21 page q D2 S1 D1 G2 S2 S1 G1 S2 e i u y t w 1 FCA50CC50 MOSFET MODULE UL;E76102 (M) 1 NAME PLATE 107.5 ±0.6 2・φ6.5 23 23 93 ±0.3 3 ーM5 TAB =110(T0.5) 3 2 1 Unit :A ■Maximum Ratings (Tj=25℃ unless otherwise specified) ■Electrical Charactistics (Tj=25℃ unless otherwise specified) Symbol Item Conditions Ratings FCA50CC50 Unit VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ±20 V ID Drain Current DC Pulse Duty 55% 50 A IDP 100 -ID Source Current 50 A PT Total Power Dissipation Tc =25℃ 330 W Tj Channel Temperature −40 to +150 ℃ Tstg Storage Temperature −40 to +125 ℃ VISO Isolation Voltage (R.M.S.) A.C. 1minute 2500 V Mounting Torque Mounting (M6) Terminal (M5) Recommended Value 2.5-3.9 (25-40) 4.7 (48) N ・m (kgf・B) Recommended Value 1.5-2.5 (15-25) 2.7 (28) Mass Typical Value 240 g Symbol Item Conditions Ratings Min. Typ. Max. ±1.0 Unit IGSS Gate Leakage Current VGS =±20V,VDS=0V μA 1.0 IDSS Zero Gate Voltage Drain Current VGS =0V,VDS=500V mA 500 V (BR) DSS Darin-Source Breakdown Voltage VGS =0V,ID=1mA V 1.0 5.0 VGS(th) Gate-Source Threshold Voltage VDS =VGS,ID=10mA V 140 RDS(on) Drain-Source On-State Resistance ID =25A,VGS=15V m Ω 3.5 VDS(on) Drain-Source On-State Voltage ID =25A,VGS=15V V 30 gfs Forward Transconductance VDS =10V,ID=25A S 10000 Ciss Input Capacitance VGS =0V,VDS=25V,f=1.0MHz pF 1900 Coss Output Capacitance VGS =0V,VDS=25V,f=1.0MHz pF 750 Crss Reverse Transfer Capacitance VGS =0V,VDS=25V,f=1.0MHz pF 60 tr Switching Time Rise Time Turn-on Delay Time Fall Time Turn-off Delay Time VDD =300V,VGS=15V ID =25A,RG=5Ω ns 100 td (on) 520 tf 140 td (off) 2.0 VSDS Diode Forward Voltage IS =25A,VGS=0V V 80 100 trr Reverse Recovery Time IS =25A,VGS=−5V,di/dt=100A/μs ns 0.38 1.67 Rth (j-c) Thermal Resistance MOSFET Diode ℃/W FCA50CC50 is a dual power MOSFET module designed for fast swiching applications of high voltage and current. (2 devices are serial connected with a fast recovery diode (trr≦100ns)reverse connected across each MOSFET.) The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. ● ID =50A, VDSS=500V ● Suitable for high speed switching applications. ● Low ON resistance. ● Wide Safe Operating Areas. ● trr ≦100ns fast recovery diode for free wheel. (Applications) UPS (CVCF) , Motor Control, Switching Power Supply, etc. |
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