STGF3NC120HD datasheet(2/11 Pages) STMICROELECTRONICS

Part #	STGF3NC120HD

Description	N-CHANNEL 3A - 1200V TO-220FP FAST PowerMESH??IGBT with Integral Damper Diode

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

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STGF3NC120HD

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Table 3: Absolute Maximum ratings

( ) Pulse width limited by safe operating area

Table 4: Thermal Data

ELECTRICAL CHARACTERISTICS (TCASE =25°C UNLESS OTHERWISE SPECIFIED)

Table 5: On/Off

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VGS = 0)

1200

V

VECR

Emitter-Collector Voltage

20

V

VGE

Gate-Emitter Voltage

±20

V

IC

Collector Current (continuous) at TC = 25°C

6A

IC

Collector Current (continuous) at TC = 100°C

3A

ICM ( )

Collector Current (pulsed)

10

A

PTOT

Total Dissipation at TC = 25°C

25

W

Derating Factor

0.20

W/°C

VISO

Insulation withstand voltage AC (t=1sec, Tc=25°C)

2500

V

Tstg

Storage Temperature

–55 to 150

°C

Tj

Operating Junction Temperature range

Min.

Typ.

Max.

Rthj-case

Thermal Resistance Junction-case

5.0

°C/W

Rthj-amb

Thermal Resistance Junction-ambient

62.5

°C/W

TL

Maximum Lead Temperature for Soldering Purpose (1.6 mm

from case, for 10 sec.)

300

°C

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-Emitter Breakdown

Voltage

IC = 1 mA, VGE = 0

1200

V

ICES

Collector cut-off Current

(VGE = 0)

VCE = Max Rating, TC = 25 °C

VCE = Max Rating, TC = 125 °C

50

1

µA

mA

IGES

Gate-Emitter Leakage

Current (VCE = 0)

VGE = ± 20V , VCE = 0

±100

nA

VGE(th)

Gate Threshold Voltage

VCE = VGE, IC = 250 µA

25

V

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE = 15V, IC = 3 A

VGE = 15V, IC = 3 A, Tc= 125°C

2.3

2.2

2.8

V

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