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IDT70V15S25PF Datasheet(PDF) 8 Page - Integrated Device Technology |
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IDT70V15S25PF Datasheet(HTML) 8 Page - Integrated Device Technology |
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8 / 18 page  6.42 IDT70V16/5S/L High-Speed 3.3V 16/8K x 9 Dual-Port Static RAM Industrial and Commercial Temperature Ranges 8 PRELIMINARYPRE PRELIMINARY NOTES: 1. Transition is measured 0mV from Low or High-impedance voltage with the Output Test Load (Figure 2). 2. This parameter is guaranteed by device characterization but not production tested. 3. To access SRAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the SRAM under all operating conditions. Although tDH and tOW values will vary over voltageand temperature, the actual tDH will always be smaller than the actual tOW. 5. 'X' in part numbers indicates power rating (S or L). AC Electrical Characteristics Over the Operating Temperature and Supply Voltage(5) Symbol Parameter 70V16/5X15 Com'l Only 70V16/5X20 Com'l & Ind 70V16/5X25 Com'l Only Unit Min. Max. Min. Max. Min. Max. WRITE CYCLE tWC Write Cycle Time 15 ____ 20 ____ 25 ____ ns tEW Chip Enable to End-of-Write(3) 12 ____ 15 ____ 20 ____ ns tAW Address Valid to End-of-Write 12 ____ 15 ____ 20 ____ ns tAS Address Set-up Time(3) 0 ____ 0 ____ 0 ____ ns tWP Write Pulse Width 12 ____ 15 ____ 20 ____ ns tWR Write Recovery Time 0 ____ 0 ____ 0 ____ ns tDW Data Valid to End-of-Write 10 ____ 15 ____ 15 ____ ns tHZ Output High-Z Time(1,2) ____ 10 ____ 12 ____ 15 ns tDH Data Hold Time(4) 0 ____ 0 ____ 0 ____ ns tWZ Write Enable to Output in High-Z(1,2) ____ 10 ____ 12 ____ 15 ns tOW Output Active from End-of-Write(1,2,4) 0 ____ 0 ____ 0 ____ ns tSWRD SEM Flag Write to Read Time 5 ____ 5 ____ 5 ____ ns tSPS SEM Flag Contention Window 5 ____ 5 ____ 5 ____ ns 5669 tbl 12 |
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