Q67060-S6185 datasheet(1/8 Pages) INFINEON

Part #	Q67060-S6185

Description	SIPMOS짰 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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SPB80N06S-08

SPI80N06S-08, SPP80N06S-08

SIPMOS® Power-Transistor

Features

• N-channel - Enhancement mode

• Automotive AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Avalanche test

• Repetive Avalanche up to

Tjmax = 175 °C

VDD=30 V, ID=80 A, VGS=10 V, RG=2.4 Ω

• dv /dt rated

T C=25 °C, V GS=10 V

T C=100 °C, V GS=10 V

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol Conditions

Unit

Continuous drain current

1)

I D

T C=25 °C, V GS=10 V

80

A

T C=100 °C, V GS=10 V

80

Pulsed drain current

2)

I D,pulse

T C=25 °C

320

Avalanche energy, single pulse

E AS

I D=80 A, R GS=25 Ω,

V DD=25 V

700

mJ

Avalanche energy, periodic

2)

E AR

T j≤175 °C

30

Reverse diode dv /dt

2)

dv /dt

I D=80 A, V DS=40 V,

di /dt =200 A/µs,

T j,max=175 °C

6

kV/µs

Gate source voltage

V GS

±20

V

Power dissipation

P tot

T C=25 °C

300

W

Operating and storage temperature

T j, T stg

-55 ... +175

°C

IEC climatic category; DIN IEC 68-1

55/175/56

Value

V DS

55

V

R DS(on),max (SMD version)

7.7

m

Ω

I D

80

A

Product Summary

P-TO220-3-1

P-TO262-3-1

P-TO263-3-2

Type

Package

Ordering Code

Marking

SPB80N06S-08

P-TO263-3-2

Q67060-S6185

1N0608

SPI80N06S-08

P-TO262-3-1

Q67060-S6187

1N0608

SPP80N06S-08

P-TO220-3-1

Q67060-S6186

1N0608

Rev. 1.0

page 1

2004-11-30

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