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Q67040-S4630 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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Q67040-S4630 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 11 page SPD06N60C3 CoolMOS TM Power Transistor Features • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • High peak current capability • Ultra low effective capacitances • Extreme dv /dt rated • Improved transconductance Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Unit Continuous drain current I D T C=25 °C A T C=100 °C Pulsed drain current 1) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=3.1 A, V DD=50 V 200 mJ Avalanche energy, repetitive t AR 1),2) E AR I D=6.2 A, V DD=50 V Avalanche current, repetitive t AR 1) I AR A Drain source voltage slope dv /dt I D=6.2 A, V DS=480 V, T j=125 °C V/ns Gate source voltage V GS static V V GS AC (f >1 Hz) Power dissipation P tot T C=25 °C W Operating and storage temperature T j, T stg °C ±20 ±30 74 -55 ... 150 0.5 6.2 50 Value 6.2 3.9 18.6 V DS @ T j,max 650 V R DS(on),max 0.75 Ω I D 6.2 A Product Summary P G-TO252 Type Package Ordering Code Marking SPD06N60C3 P G-TO252 Q67040-S4630 06N60C3 Rev. 1.4 Page 1 200 5-10-05 Reverse diode dv/dt dv/dt 15 V/ns 7 ) |
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