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SIGC16T120C Datasheet(PDF) 1 Page - Infineon Technologies AG |
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SIGC16T120C Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page SIGC16T120C Edited by INFINEON Technologies AI PS DD HV3, L 7131-M, Edition 2, 03.09.2003 IGBT Chip in NPT-technology This chip is used for: • BUP 311D /BUP 212 FEATURES: • 1200V NPT technology • 200µm chip • short circuit prove • positive temperature coefficient • easy paralleling Applications: • drives G C E Chip Type VCE ICn Die Size Package Ordering Code SIGC16T120C 1200V 8A 4.04 x 4 mm 2 sawn on foil Q67041-A4673- A003 MECHANICAL PARAMETER: Raster size 4.04 x 4 Area total / active 16.16 / 10.4 Emitter pad size 1.88x2.18 Gate pad size 0.71x1.08 mm 2 Thickness 200 µm Wafer size 150 mm Flat position 0 deg Max.possible chips per wafer 898 pcs Passivation frontside Photoimide Emitter metalization 3200 nm Al Si 1% Collector metalization 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue or solder Wire bond Al, ≤500µm Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C |
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