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Q67050-A4065-A001 Datasheet(PDF) 1 Page - Infineon Technologies AG |
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Q67050-A4065-A001 Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 4 page Preliminary SIDC04D60F6 Edited by INFINEON Technologies AI PS DD HV3, L 4334M, Edition 2, 14.05.2003 Fast switching diode chip in EMCON-Technology This chip is used for: • EUPEC power modules and discrete devices FEATURES: • 600V EMCON technology 70 µm chip • soft , fast switching • low reverse recovery charge • small temperature coefficient Applications: • SMPS, resonant applications, drives A C Chip Type VR IF Die Size Package Ordering Code SIDC04D60F6 600V 9A 1.85 x 1.85 mm 2 sawn on foil Q67050-A4065- A001 MECHANICAL PARAMETER: Raster size 1.85 x 1.85 Area total / active 3.42 / 2.07 Anode pad size 1.37 x 1.37 mm 2 Thickness 70 µm Wafer size 150 mm Flat position 180 deg Max. possible chips per wafer 4497 pcs Passivation frontside Photoimide Anode metallisation 3200 nm AlSiCu Cathode metallisation 1400 nm Ni Ag –system suitable for epoxy and soft solder die bonding Die bond electrically conductive glue or solder Wire bond Al, ≤350µm Reject Ink Dot Size ∅ 0.65mm ; max 1.2mm Recommended Storage Environment store in original container, in dry nitrogen, < 6 month at an ambient temperature of 23°C |
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