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ITS640S2S Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # ITS640S2S
Description  Smart Sense High-Side Power Switch For Industrial Applications
Download  14 Pages
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

ITS640S2S Datasheet(HTML) 7 Page - Infineon Technologies AG

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PROFET® ITS 640S2
Infineon Technologies AG
Page 7
2006-Mar-28
Truth Table
Input
Output
Status
Current
Sense
level
level
level
IIS
Normal
operation
L
H
L
H
H
L
0
nominal
Current-
limitation
L
H
L
H
H
H
0
0
Short circuit to
GND
L
H
L
L15)
H
H
0
0
Over-
temperature
L
H
L
L
H
H
0
0
Short circuit to
Vbb
L
H
H
H
L16)
L
0
<nominal 17)
Open load
L
H
L18)
H
H (L19))
L
0
0
Undervoltage
L
H
L
L
H
L
0
0
Overvoltage
L
H
L
L
H
L
0
0
Negative output
voltage clamp
L
L
H
0
L = "Low" Level
X = don't care
Z = high impedance, potential depends on external circuit
H = "High" Level
Status signal after the time delay shown in the diagrams (see fig 5. page 11...12)
15
) The voltage drop over the power transistor is Vbb-VOUT>typ.3V. Under this condition the sense current IIS is
zero
16) An external short of output to Vbb, in the off state, causes an internal current from output to ground. If RGND
is used, an offset voltage at the GND and ST pins will occur and the VST low signal may be errorious.
17
) Low ohmic short to Vbb may reduce the output current IL and therefore also the sense current IIS.
18
) Power Transistor off, high impedance
19
) with external resistor between pin 4 and pin 6&7
Terms
PROFET
V
IS
ST
OUT
GND
bb
VST
V
IN
I ST
I IN
V
bb
Ibb
IGND
6
2
4
3
5
IN
VIS
I IS
V
OUT
VON
I L
OUT
1
7
R
GND
Input circuit (ESD protection)
IN
GND
I
R
ESD-ZD
I
I
I
The use of ESD zener diodes as voltage clamp at DC
conditions is not recommended.


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