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SP0000-87992 Datasheet(PDF) 3 Page - Infineon Technologies AG |
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SP0000-87992 Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 8 page IPB100N06S3-03 IPI100N06S3-03, IPP100N06S3-03 Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics 2) Input capacitance C iss - 21620 - pF Output capacitance C oss - 3290 - Reverse transfer capacitance Crss - 3140 - Turn-on delay time t d(on) -54 - ns Rise time t r -67 - Turn-off delay time t d(off) -77 - Fall time t f -60 - Gate Charge Characteristics 2) Gate to source charge Q gs - 130 - nC Gate to drain charge Q gd -70 - Gate charge total Q g - 320 480 Gate plateau voltage V plateau - 5.6 - V Reverse Diode Diode continous forward current 2) I S - - 100 A Diode pulse current 2) I S,pulse - - 400 Diode forward voltage V SD V GS=0 V, I F=80 A, T j=25 °C 0.6 0.9 1.3 V Reverse recovery time 2) t rr V R=27.5 V, I F=I S, di F/dt =100 A/µs -60 ns Reverse recovery charge 2) Q rr -95 - nC 2) Defined by design. Not subject to production test. 3) See diagrams 12 and 13. 4) Qualified at -5V and +20V. 5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 1) Current is limited by bondwire; with an R thJC = 0.5 K/W the chip is able to carry 223 A at 25°C. For detailed information see Application Note ANPS071E at www.infineon.com/optimos T C=25 °C Values V GS=0 V, V DS=25 V, f =1 MHz V DD=27.5 V, V GS=10 V, I D=80 A, R G=1.3 Ω V DD=11 V, I D=80 A, V GS=0 to 10 V Rev. 1.0 page 3 2005-09-16 |
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