IPB80N08S2L-07 datasheet(5/8 Pages) INFINEON

Part #	IPB80N08S2L-07

Description	OptiMOS짰 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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5 / 8 page

IPB80N08S2L-07

IPP80N08S2L-07

5 Typ. output characteristics

6 Typ. drain-source on-state resistance

I D = f(V DS); T j = 25 °C

R DS(on) = (I D); T j = 25 °C

parameter: V GS

7 Typ. transfer characteristics

8 Typ. Forward transconductance

I D = f(V GS); V DS = 6V

g fs = f(I D); T j = 25°C

parameter: T j

parameter: g fs

2.5 V

3 V

3.5 V

4 V

10 V

0

50

100

150

200

250

300

02468

10

V DS [V]

-55 °C

25 °C

175 °C

0

20

40

60

80

100

120

140

160

180

200

12

34

V GS [V]

0

50

100

150

200

250

0

50

100

150

200

I D [A]

3 V

3.5 V

4 V

4.5 V

10 V

0

2

4

6

8

10

12

14

16

18

20

0

20

40

60

80

100

120

I D [A]

Rev. 1.0

page 5

2006-03-03

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IPB80N08S2L-07 Datasheet(PDF) 5 Page - Infineon Technologies AG

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