IPI80N06S3L-06 datasheet(3/8 Pages) INFINEON

Part #	IPI80N06S3L-06

Description	OptiMOS짰-T Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

Direct Link	http://www.infineon.com

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IPB80N06S3L-06

IPI80N06S3L-06, IPP80N06S3L-06

Parameter

Symbol

Conditions

Unit

min.

typ.

max.

Dynamic characteristics

2)

Input capacitance

C iss

-

9417

-

pF

Output capacitance

C oss

-

1181

-

Reverse transfer capacitance

Crss

-

1127

-

Turn-on delay time

t d(on)

-20

-

ns

Rise time

t r

-43

-

Turn-off delay time

t d(off)

-55

-

Fall time

t f

-39

-

Gate Charge Characteristics

2)

Gate to source charge

Q gs

-44

-

nC

Gate to drain charge

Q gd

-24

-

Gate charge total

Q g

-

131

196

Gate plateau voltage

V plateau

-

4.4

-

V

Reverse Diode

Diode continous forward current

2)

I S

-

80

A

Diode pulse current

2)

I S,pulse

-

320

Diode forward voltage

V SD

V GS=0 V, I F=80 A,

T j=25 °C

0.6

0.9

1.3

V

Reverse recovery time

2)

t rr

V R=27.5 V, I F=I S,

di F/dt =100 A/µs

-47

ns

Reverse recovery charge

2)

Q rr

-62

nC

T C=25 °C

Values

V GS=0 V, V DS=25 V,

f =1 MHz

V DD=27.5 V,

V GS=10 V, I D=80 A,

R G=3.5 Ω

V DD=11 V, I D=80 A,

V GS=0 to 10 V

5) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

1) Current is limited by bondwire; with an R

thJC = 1.1 K/W the chip is able to carry 114 A at 25°C. For detailed

information see Application Note ANPS071E at www.infineon.com/optimos

2) Defined by design. Not subject to production test.

3) See diagrams 12 and 13.

4) Qualified at -5V and +16V.

Rev. 1.0

page 3

2005-09-16

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IPI80N06S3L-06 Datasheet(PDF) 3 Page - Infineon Technologies AG

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