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IPP80N04S2-H4 Datasheet(PDF) 7 Page - Infineon Technologies AG

Part # IPP80N04S2-H4
Description  OptiMOS짰 Power-Transistor
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Manufacturer  INFINEON [Infineon Technologies AG]
Direct Link  http://www.infineon.com
Logo INFINEON - Infineon Technologies AG

IPP80N04S2-H4 Datasheet(HTML) 7 Page - Infineon Technologies AG

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IPB80N04S2-H4
IPP80N04S2-H4, IPI80N04S2-H4
13 Typical avalanche energy
14 Typ. gate charge
E AS = f(T j)
V GS = f(Q gate); I D = 80 A pulsed
parameter: I D = 80A
15 Typ. drain-source breakdown voltage
16 Gate charge waveforms
V BR(DSS) = f(T j); I D = 1 mA
0
100
200
300
400
500
600
700
25
75
125
175
T j [°C]
V GS
Q gate
Q gs
Q gd
Q g
V GS
Q gate
Q gs
Q gd
Q g
8 V
32 V
0
2
4
6
8
10
12
0
20
40
60
80
100
120
Q gate [nC]
36
38
40
42
44
46
48
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.0
page 7
2006-03-02


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