IPP16CN10N datasheet(3/12 Pages) INFINEON

Part #	IPP16CN10N

Description	OptiMOS짰2 Power-Transistor Excellent gate charge x RDS(on) product (FOM)

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB16CN10N G IPD16CN10N G

IPI16CN10N G IPP16CN10N G

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Dynamic characteristics

Input capacitance

C iss

-

2420

3220

pF

Output capacitance

C oss

-

364

484

Reverse transfer capacitance

C rss

-23

35

Turn-on delay time

t d(on)

-15

22

ns

Rise time

t r

-14

21

Turn-off delay time

t d(off)

-27

41

Fall time

t f

-7

11

Gate Charge Characteristics

5)

Gate to source charge

Q gs

-13

18

nC

Gate to drain charge

Q gd

-9

13

Switching charge

Q sw

-15

21

Gate charge total

Q g

-36

48

Gate plateau voltage

V plateau

-

5.6

-

V

Output charge

Q oss

V DD=50 V, V GS=0 V

-38

51

nC

Reverse Diode

Diode continous forward current

I S

-

53

A

Diode pulse current

I S,pulse

-

212

Diode forward voltage

V SD

V GS=0 V, I F=53 A,

T j=25 °C

-

1

1.2

V

Reverse recovery time

t rr

-

110

ns

Reverse recovery charge

Q rr

-

215

-

nC

5) See figure 16 for gate charge parameter definition

V R=50 V, I F=I S,

di F/dt =100 A/µs

T C=25 °C

Values

V GS=0 V, V DS=50 V,

f =1 MHz

V DD=50 V, V GS=10 V,

I D=26.5 A, R G=1.6 Ω

V DD=50 V, I D=53 A,

V GS=0 to 10 V

Rev. 1.01

page 3

2006-06-02

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