UL62H256ASK35G1 datasheet(6/10 Pages) ZMD

Part #	UL62H256ASK35G1

Description	Low Voltage Automotive Fast 32K x 8 SRAM

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Manufacturer	ZMD [Zentrum Mikroelektronik Dresden AG]

Direct Link	http://www.zmdi.com

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6 / 10 page

6

May 07, 2004

UL62H256A

Data Retention Mode

E - controlled

Data Retention

3.0 V

tsu(DR)

trec

VCC

E

VCC(DR) ≥ 2 V

0 V

2.2 V

VCC(DR) - 0.2 V ≤ VE(DR) ≤ VCC(DR) + 0.3 V

Data Retention

Characteristics

Symbol

Conditions

Min.

Typ.

Max.

Unit

Alt.

IEC

Data Retention Supply Voltage

VCC(DR)

2V

Data Retention Supply Current

ICC(DR) VCC(DR) = 2V

VE

= VCC(DR) - 0.2 V

K-Type

A-Type

5

20

µA

Data Retention Setup Time

tCDR

tsu(DR)

See Data Retention

Waveforms (above)

0ns

Operating Recovery Time

tR

trec

tcR

ns

Test Configuration for Functional Check

DQ0

DQ1

DQ2

DQ3

DQ4

DQ5

DQ6

DQ7

VIH

VIL

VSS

VCC

3.0 V

1076

1260

VO

A0

A1

A2

A3

A4

A5

A6

A7

A8

A9

A10

A11

A12

A13

A14

E

W

G

30 pF e

e In measurement of tdis(E),tdis(W), ten(E), ten(W), ten(G) the capacitance is 5 pF.

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UL62H256ASK35G1 Datasheet(PDF) 6 Page - Zentrum Mikroelektronik Dresden AG

UL62H256ASK35G1 Datasheet(HTML) 6 Page - Zentrum Mikroelektronik Dresden AG

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