HN58X2508FPIE datasheet(6/29 Pages) RENESAS

Part #	HN58X2508FPIE

Description	Electrically Erasable and Programmable Read Only Memory

Download	29 Pages

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Manufacturer	RENESAS [Renesas Technology Corp]

Direct Link	http://www.renesas.com

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6 / 29 page

HN58X2508I/HN58X2516I

Rev.2.00, Aug.19.2004, page 6 of 27

DC Characteristics

Parameter

Symbol

Min

Max

Unit

Test conditions

Input leakage current

ILI



2

µA

VCC = 5.5 V, VIN = 0 to 5.5 V

(

S, D, C, HOLD, W)

Output leakage current

ILO



2

µA

VCC = 5.5 V, VOUT = 0 to 5.5

V

(Q)

VCC current

Standby

ISB



3

µA

VIN = VSS or VCC,

VCC = 5.5 V

Active

ICC1



2

mA

VCC = 3.6 V, Read at 5 MHz

VIN = VCC

× 0.1/VCC × 0.9

Q = OPEN



2.5

mA

VCC = 5.5 V, Read at 5 MHz

VIN = VCC

× 0.1/VCC × 0.9

Q = OPEN

ICC2



2

mA

VCC = 3.6 V, Write at 5 MHz

VIN = VCC

× 0.1/VCC × 0.9



3.0

mA

VCC = 5.5 V, Write at 5 MHz

VIN = VCC

× 0.1/VCC × 0.9

Output voltage

VOL1



0.4

V

VCC = 5.5 V, IOL = 2 mA

VOL2



0.4

V

VCC = 2.5 V, IOL = 1.5 mA

VOH1

VCC

× 0.8



V

VCC = 5.5 V, IOL =

−2 mA

VOH2

VCC

× 0.8



V

VCC = 2.5 V, IOL =

−0.4 mA

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