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IPD230N06NG Datasheet(PDF) 3 Page - Infineon Technologies AG |
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IPD230N06NG Datasheet(HTML) 3 Page - Infineon Technologies AG |
3 / 9 page IPD230N06N G Parameter Symbol Conditions Unit min. typ. max. Dynamic characteristics Input capacitance C iss - 860 1100 pF Output capacitance C oss - 240 320 Reverse transfer capacitance C rss -64 96 Turn-on delay time t d(on) -10 15 ns Rise time t r -25 37 Turn-off delay time t d(off) -26 39 Fall time t f -24 36 Gate Charge Characteristics 4) Gate to source charge Q gs -5 6 nC Gate charge at threshold Q g(th) - 2.6 3 Gate to drain charge Q gd - 9.7 14.6 Switching charge Q sw -12 17 Gate charge total Q g -23 31 Gate plateau voltage V plateau - 5.5 - V Output charge Q oss V DD=30 V, V GS=10 V -9 11 Reverse Diode Diode continous forward current I S - - 30 A Diode pulse current I S,pulse - - 120 Diode forward voltage V SD V GS=0 V, I F=30 A, T j=25 °C - 0.91 1.3 V Reverse recovery time t rr -39 48 ns Reverse recovery charge Q rr -48 60 nC 4) See figure 16 for gate charge parameter definition V R=30 V, I F=I S, di F/dt =100 A/µs T C=25 °C Values V GS=0 V, V DS=30 V, f =1 MHz V DD=30 V, V GS=10 V, I D=30 A, R G=12 Ω V DD=30 V, I D=30 A, V GS=0 to 10 V Rev. 1.0 page 3 2006-07-05 |
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