IPB120N06NG datasheet(6/10 Pages) INFINEON

Part #	IPB120N06NG

Description	OptiMOS짰 Power-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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IPB120N06N G

IPP120N06N G

9 Drain-source on-state resistance

10 Typ. gate threshold voltage

R DS(on)=f(T j); I D=75 A; V GS=10 V

V GS(th)=f(T j); V GS=V DS

parameter: I D

11 Typ. capacitances

12 Forward characteristics of reverse diode

C =f(V DS); V GS=0 V; f =1 MHz

I F=f(V SD)

parameter: T j

typ

98 %

0

5

10

15

20

25

30

35

-60

-20

20

60

100

140

180

T j [°C]

94 µA

940 µA

0

0.5

1

1.5

2

2.5

3

3.5

4

-60

-20

20

60

100

140

180

T j [°C]

25 °C

175 °C

25°C 98%

175°C 98%

10

3

10

2

10

1

10

0

10

-1

0

0.5

1

1.5

2

V SD [V]

Ciss

Coss

Crss

10

4

10

3

10

2

10

1

0

1020

304050

V DS [V]

Rev. 1.11

page 6

2006-07-05

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