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IKP06N60T Datasheet(PDF) 6 Page - Infineon Technologies AG |
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IKP06N60T Datasheet(HTML) 6 Page - Infineon Technologies AG |
6 / 13 page IKP06N60T TrenchStop series p Power Semiconductors 6 Rev. 2.2 May 06 0A 3A 6A 9A 12A 15A 1ns 10ns 100ns t r t d(on) t f t d(off) 10Ω 30Ω 50Ω 70Ω 90Ω 1ns 10ns 100ns t f t r t d(off) t d(on) IC, COLLECTOR CURRENT RG, GATE RESISTOR Figure 9. Typical switching times as a function of collector current (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, RG = 23Ω, Dynamic test circuit in Figure E) Figure 10. Typical switching times as a function of gate resistor (inductive load, TJ=175°C, VCE = 400V, VGE = 0/15V, IC = 6A, Dynamic test circuit in Figure E) 50°C 100°C 150°C 1ns 10ns 100ns t r t f t d(on) t d(off) -50°C 0°C 50°C 100°C 150°C 0V 1V 2V 3V 4V 5V 6V min. typ. max. TJ, JUNCTION TEMPERATURE TJ, JUNCTION TEMPERATURE Figure 11. Typical switching times as a function of junction temperature (inductive load, VCE = 400V, VGE = 0/15V, IC = 6A, RG = 23Ω, Dynamic test circuit in Figure E) Figure 12. Gate-emitter threshold voltage as a function of junction temperature (IC = 0.18mA) |
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