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IGB30N60T Datasheet(PDF) 1 Page - Infineon Technologies AG |
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IGB30N60T Datasheet(HTML) 1 Page - Infineon Technologies AG |
1 / 12 page IGB30N60T TrenchStop Series q Power Semiconductors 1 Rev. 2.1 June 06 ® Low Loss IGBT in TrenchStop and Fieldstop technology • Very low VCE(sat) 1.5 V (typ.) • Maximum Junction Temperature 175 °C • Short circuit withstand time – 5 µs • Designed for : - Frequency Converters - Uninterruptible Power Supply • TrenchStop and Fieldstop technology for 600 V applications offers : - very tight parameter distribution - high ruggedness, temperature stable behavior - very high switching speed • Positive temperature coefficient in VCE(sat) • Low EMI • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC 1 for target applications • Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/ Type VCE IC VCE(sat),Tj=25°C Tj,max Marking Code Package IGB30N60T 600V 30A 1.5V 175 °C G30T60 P-TO-263-3-2 Maximum Ratings Parameter Symbol Value Unit Collector-emitter voltage VCE 600 V DC collector current, limited by Tjmax TC = 25°C TC = 100°C IC 60 30 Pulsed collector current, tp limited by Tjmax ICpul s 90 Turn off safe operating area (VCE ≤ 600V, Tj ≤ 175°C) - 90 A Gate-emitter voltage VGE ±20 V Short circuit withstand time 2) VGE = 15V, VCC ≤ 400V, Tj ≤ 150°C tSC 5 µs Power dissipation TC = 25°C Ptot 187 W Operating junction temperature Tj -40...+175 Storage temperature Tstg -55...+175 Soldering temperature (reflow soldering, MSL1) - 220 °C 1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s. G C E P-TO-263-3-2 ® ® |
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