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BTS5230GS Datasheet(PDF) 9 Page - Infineon Technologies AG |
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BTS5230GS Datasheet(HTML) 9 Page - Infineon Technologies AG |
9 / 28 page Smart High-Side Power Switch BTS 5230GS Electrical Characteristics Data Sheet 9 V2.0, 2005-06-13 Temperatures 3.1.13 Junction Temperature Tj -40 150 °C 3.1.14 Dynamical temperature increase while switching ∆T j -60 °C 3.1.15 Storage Temperature Tstg -55 150 °C ESD Susceptibility 3.1.16 ESD susceptibility HBM IN, SEN IS OUT VESD -1 -2 -4 1 2 4 kV according to EIA/JESD 22-A 114B 1) R and L describe the complete circuit impedance including line, contact and generator impedances 2) RI is the internal resistance of the Load Dump pulse generator 3) Current limitation is a protection feature. Operation in current limitation is considered as “outside” normal operating range. Protection features are not designed for continuous repetitive operation. 4) Pulse shape represents inductive switch off: IL(t) = IL(0) * (1 - t / tpulse); 0 < t < tpulse 5) Device mounted on PCB (50 mm x 50 mm x 1.5mm epoxy, FR4) with 6 cm2 copper heatsinking area (one layer, 70 µm thick) for Vbb connection. PCB is vertical without blown air. Tj = 25 °C (unless otherwise specified) Pos. Parameter Symbol Limit Values Unit Test Conditions min. max. |
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