Q67045-A5014 datasheet(2/9 Pages) INFINEON

Part #	Q67045-A5014

Description	SIPMOS짰 Small-Signal-Transistor

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Manufacturer	INFINEON [Infineon Technologies AG]

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2 / 9 page

BSS127

Parameter

Symbol Conditions

Unit

min.

typ.

max.

Thermal characteristics

Thermal resistance,

junction - minimal footprint

R thJA

-

250

K/W

Electrical characteristics, at T j=25 °C, unless otherwise specified

Static characteristics

Drain-source breakdown voltage

V (BR)DSS V GS=0 V, I D=250 µA

600

-

V

Gate threshold voltage

V GS(th)

V DS=0 V, I D=8 µA

1.4

2.0

2.6

Drain-source leakage current

I D (off)

V DS=600 V, V GS=0 V,

T j=25 °C

-

0.1

µA

V DS=600 V, V GS=0 V,

T j=150 °C

--

10

Gate-source leakage current

I GSS

V GS=20 V, V DS=0 V

-

10

100

nA

Drain-source on-state resistance

R DS(on)

V GS=4.5 V,

I D=0.016 A

-

330

600

Ω

V GS=10 V, I D=0.016 A

-

310

500

Transconductance

g fs

|V DS|>2|I D|R DS(on)max,

I D=0.01 A

0.007

0.015

-

S

Values

Rev. 1.1

page 2

2006-03-24

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Q67045-A5014 Datasheet(PDF) 2 Page - Infineon Technologies AG

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