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H04-004-03a
MS5F5932
13
9
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Dynamic Gate charge (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
VGE=+15V,sense terminal
Tj=125°C,sense terminal
Tj= 125°C, sense terminal
Collector current vs. Collector-Emitter voltage (typ.)
VGE=0V, f= 1MHz, Tj= 25°C
Tj= 25°C
0
400
800
1200
1600
2000
2400
2800
01
23
4
5
Collector-Emitter voltage : VCE [V]
Tj=25°C
Tj=125°C
0
400
800
1200
1600
2000
2400
2800
0
1
2
345
Collector-Emitter voltage : VCE [V]
VGE=20V
15V
12V
10V
9V
0
2
4
6
8
10
5
101520
25
Gate - Emitter voltage : VGE [ V ]
Ic=2400A
Ic=1200A
Ic=600A
0.1
1.0
10.0
100.0
1000.0
010
20
30
Collector-Emitter voltage : VCE [V]
Cies
Coes
Cres
0
1000
2000
3000
4000
5000
Gate charge : Qg [ nC ]
0
VGE
VCE
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