1

Features

– Sixty-three 32K Word (64K Byte) Sectors with Individual Write Lockout

– Eight 4K Word (8K Byte) Sectors with Individual Write Lockout

Memory Plane A: Eight 4K Word and Fifteen 32K Word Sectors

Memory Plane B: Forty-eight 32K Word Sectors

– Supports Reading/Programming Data from Any Sector by Suspending Erase of

Any Different Sector

–25 mA Active

– 10 µA Standby

Description

The AT49BV/LV3218(T) is a 2.65- to 3.3-volt (BV)/3.0V to 3.6V (LV) 32-megabit Flash

memory organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits

each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The

memory is divided into 71 sectors for erase operations. The device is offered in 48-

lead TSOP and 48-ball CBGA packages. The device has CE and OE control signals to

avoid any bus contention. This device can be read or reprogrammed using a single

2.65V power supply, making it ideally suited for in-system programming.

Pin Configurations

Pin Name

Function

A0 - A20

Addresses

CE

Chip Enable

OE

Output Enable

WE

Write Enable

RESET

Reset

RDY/BUSY

READY/BUSY Output

VPP

Optional Power Supply

I/O0 - I/O14

Data Inputs/Outputs

I/O15 (A-1)

I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode)

BYTE

Selects Byte or Word Mode

NC

No Connect

32-megabit

(2Mx 16/4Mx8)

3-volt Only

Flash Memory

AT49BV3218

AT49BV3218T

AT49LV3218

AT49LV3218T

Not Recommended for

New Designs. New

Designs Should Use

AT49BV/LV320(T)/321(T)

Rev. 2452F–FLASH–10/02