MAPLST2122-060CF datasheet(2/5 Pages) MACOM

Part #	MAPLST2122-060CF

Description	RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 60W, 28V

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Manufacturer	MACOM [Tyco Electronics]

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RF Power LDMOS Transistor, 2110 — 2170 MHz, 60W, 28V

MAPLST2122-060CF

4/6/2005

Preliminary

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Zero Gate Voltage Drain Leakage Current

(VDS = 65 Vdc, VGS = 0)

IDSS

—

10

µAdc

Zero Gate Voltage Drain Leakage Current

(VDS = 26 Vdc, VGS = 0)

IDSS

—

1

µAdc

Gate—Source Leakage Current

(VGS = 5 Vdc, VDS = 0)

IGSS

—

1

µAdc

ON CHARACTERISTICS

DYNAMIC CHARACTERISTICS (1)

FUNCTIONAL TESTS (In M/A-COM Test Fixture) (2)

Characteristic

Symbol

Min

Typ

Max

Unit

DC CHARACTERISTICS @ 25ºC

Drain-Source Breakdown Voltage

(VGS = 0 Vdc, ID = 20 µAdc)

V(BR)DSS

65

—

Vdc

Zero Gate Voltage Drain Leakage Current

(VDS = 28 Vdc, VGS = 0)

IDSS

—

1

µAdc

Gate—Source Leakage Current

(VGS = 5 Vdc, VDS = 0)

IGSS

—

1

µAdc

Gate Threshold Voltage

(VDS = 10 Vdc, ID = 1 mA)

VGS(th)

2

—

4

Vdc

Gate Quiescent Voltage

(VDS = 28 Vdc, ID = 500 mA)

VDS(Q)

2

—

4.5

Vdc

Drain-Source On-Voltage

(VGS = 10 Vdc, ID = 1 A)

VDS(on)

—

0.4

—

Vdc

Forward Transconductance

(VGS = 10 Vdc, ID = 1 A)

Gm

—

2.4

—

S

DYNAMIC CHARACTERISTICS @ 25ºC

Input Capacitance (Including Input Matching Capacitor in Package)

(VDS = 28 Vdc, VGS = 0, f = 1 MHz)

Ciss

—

180

—

pF

Output Capacitance

(VDS = 28 Vdc, VGS = 0, f = 1 MHz)

Coss

—

65

—

pF

Reverse Transfer Capacitance

(VDS = 28 Vdc, VGS = 0, f = 1 MHz)

Crss

—

3.0

—

pF

RF FUNCTIONAL TESTS @ 25ºC (In M/A-COM Test Fixture)

Two-Tone Common-Source Amplifier Power Gain

(VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA,

f1 = 2140.0 MHz, f2 = 2140.1 MHz)

Gps

—

12.0

—

dB

Two-Tone Drain Efficiency

(VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA,

f1 = 2140.0 MHz, f2 = 2140.1 MHz)

EFF (ŋ)

—

35

—

%

Two-Tone Common-Source Amplifier Power Gain

(VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA,

f1 = 2140.0 MHz, f2 = 2140.1 MHz)

IMD

—

-30

-28

dBc

Input Return Loss

(VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA,

f1 = 2140.0 MHz, f2 = 2140.1 MHz)

IRL

—

-12

—

dB

Two-Tone Common-Source Amplifier Power Gain

(VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz,

f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)

Gps

—

12.0

—

dB

Two-Tone Drain Efficiency

(VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz,

f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)

EFF (ŋ)

—

35

—

%

Two-Tone Common-Source Amplifier Power Gain

(VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz,

f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)

IMD

—

-30

-28

dBc

Input Return Loss

(VDS = 28 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f1 = 2110.0 MHz,

f2 = 2110.1 MHz and f1 = 2170.0 MHz, f2 = 2170.1 MHz)

IRL

—

-12

-9

dB

Output VSWR Tolerance

(VDD = 28 Vdc, POUT = 60 W, IDQ = 500 mA, f = 2110 MHz,

VSWR = 10:1, All Phase Angles at Frequency of Tests)

Ψ

No Degradation In Output Power

Before and After Test

2

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