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11.0-15.0 GHz 0.5 W Power Amplifier MAAPGM0040 M/A-COM Inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. M/A-COM makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does M/A-COM assume any liability whatsoever arising out of the use or application of any product(s) or information. • North America Tel: 800.366.2266 / Fax: 978.366.2266 • Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 • Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. RO-P-DS-3076 A Preliminary Information 1 Features ♦ 0.5 Watt Saturated Output Power Level ♦ Variable Drain Voltage (4-10V) Operation ♦ MSAG™ MESFET Process Primary Applications ♦ Point-to-Point Radio ♦ Weather Radar ♦ Airborne Radar Description The MAAPGM0040 is a packaged, 3-stage, 0.5W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in high power applications. Fabricated using M/A-COM’s repeatable, high performance and highly reliable GaAs Multifunction Self-Aligned Gate MESFET Process, each device is 100% RF tested on wafer to ensure performance compliance. M/A-COM’s MSAG™ process features robust silicon-like manufacturing processes, planar processing of ion implanted transistors, multiple implant capability enabling power, low-noise, switch and digital FETs on a single chip, and polyimide scratch protection for ease of use with automated manufacturing processes. The use of refractory metals and the absence of platinum in the gate metal formulation prevents hydrogen poisoning when employed in hermetic packaging. Parameter Symbol Absolute Maximum Units Input Power PIN 15.0 dBm Drain Supply Voltage VDD +12.0 V Gate Supply Voltage VGG -3.0 V Quiescent Drain Current (No RF, 40% IDSS) IDQ 330 mA Junction Temperature TJ 180 °C Storage Temperature TSTG -55 to +150 °C Quiescent DC Power Dissipated (No RF) PDISS 2.6 W Processing Temperature 230 °C Maximum Operating Conditions 1 1. Operation outside of these ranges may reduce product reliability. APGM0040 YWWLLLL Pin Number RF Designator 1 No Connection 2 No Connection 3 RF IN 4 No Connection 5 VGG 9 No Connection 6 No Connection 10 VDD 8 RF OUT 7 No Connection |
