Philips Semiconductors

Product specification

74ABT861

10-bit bus transceiver (3-State)

1998 Jan 16

3

LOGIC SYMBOL

23

45

67

8

9

A0 A1 A2 A3 A4 A5 A6

A7

B0 B1 B2 B3 B4 B5 B6

B7

23

22 21

20

19

18 17

16

1

13

OEBA

OEAB

10

11

A8 A9

B8 B9

15

14

SA00279

LOGIC SYMBOL (IEEE/IEC)

1

223

322

421

520

619

718

817

916

13

1

10

15

11

14

EN1(BA)

EN2(AB)

2

SA00280

LOGIC DIAGRAM

An

Bn

10

10

OEAB

OEBA

SA00281

FUNCTION TABLE

INPUTS

OPERATING

OEAB

OEBA

MODE

L

H

A data to B bus

H

L

B data to A bus

H

H

Z

H = High voltage level

L

= Low voltage level

X = Don’t care

Z = High impedance “off” state

SYMBOL

PARAMETER

CONDITIONS

RATING

UNIT

DC supply voltage

–0.5 to +7.0

V

DC input diode current

–18

mA

–1.2 to +7.0

V

DC output diode current

–50

mA

output in Off or High state

–0.5 to +5.5

V

DC output current

output in Low state

128

mA

Storage temperature range

–65 to 150

°C

NOTES:

1. Stresses beyond those listed may cause permanent damage to the device. These are stress ratings only and functional operation of the

device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to

absolute-maximum-rated conditions for extended periods may affect device reliability.

2. The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction

temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150

°C.

3. The input and output voltage ratings may be exceeded if the input and output current ratings are observed.