HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200513

Issued Date : 2005.10.01

Revised Date : 2005.10.06

Page No. : 1/4

H9926TS, H9926CTS

HSMC Product Specification

H9926TS / H9926CTS

Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

Description

This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced

trench process. It has been optimized for power management applications with a

wide range of gate drive voltage (2.5V-10V)

Features

• R

• High Density Cell Design for Ultra Low On-Resistance

• High Power and Current Handing Capability

• Fully Characterized Avalanche Voltage and Current

• Ideal for Li ion Battery Pack Applications

Applications

• Battery Protection

• Load Switch

• Power Management

Symbol

Parameter

Ratings

Units

V

DS

Drain-Source Voltage

20

V

V

GS

Gate-Source Voltage

±12

V

I

D

Drain Current (Continuous)

6

A

I

DM

Drain Current (Pulsed)

*1

30

A

Total Power Dissipation @T

W

P

D

Total Power Dissipation @T

W

T

Operating and Storage Temperature Range

-55 to +150

°C

Thermal Resistance Junction to Ambient

*2

83

°C/W

*1: Maximum DC current limited by the package

*2: 1-in

8-Lead Plastic TSSOP-8L

Package Code: TS

Pin 1: Drain 1

Pin 2 / 3: Source 1

Pin 4: Gate 1

Pin 5: Gate 2

Pin 6 / 7: Source 2

Pin 8: Drain 2

H9926TS Symbol & Pin Assignment

H9926CTS Symbol & Pin Assignment

Pin 1: Drain

Pin 2 / 3: Source 1

Pin 4: Gate 1

Pin 5: Gate 2

Pin 6 / 7: Source 2

Pin 8: Drain

Q1

Q2

1

234

5

6

7

8

Q1

Q2

1

234

5

6

7

8