H9926S datasheet(2/4 Pages) HSMC

Part #	H9926S

Description	Dual N-Channel Enhancement-Mode MOSFET (20V, 6A)

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Manufacturer	HSMC [Hi-Sincerity Mocroelectronics]

Direct Link	http://www.hsmc.com.tw

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2 / 4 page

HI-SINCERITY

MICROELECTRONICS CORP.

Spec. No. : MOS200508

Issued Date : 2005.08.01

Revised Date : 2005.10.06

Page No. : 2/4

H9926S, H9926CS

HSMC Product Specification

Electrical Characteristics (T

A=25°C, unless otherwise noted)

Symbol

Characteristic

Test Conditions

Min.

Typ.

Max.

Unit

• Static

BV

DSS

Drain-Source Breakdown Voltage

V

GS=0V, ID=250uA

20

-

V

GS=2.5V, ID=5.2A

-

34

40

R

DS(on)

Drain-Source On-State Resistance

V

GS=4.5V, ID=6A

-

25

30

m

Ω

V

GS(th)

Gate Threshold Voltage

V

DS=VGS, ID=250uA

0.6

-

1.5

V

I

DSS

Zero Gate Voltage Drain Current

V

DS=20V, VGS=0V

-

1

uA

I

GSS

Gate-Body Leakage Current

V

GS=±12V, VDS=0V

--

±100

nA

g

FS

Forward Transconductance

V

DS=10V, ID=6A

7

13

-

S

• Dynamic

Q

g

Total Gate Charge

-

4.86

-

Q

gs

Gate-Source Charge

-

0.92

-

Q

gd

Gate-Drain Charge

V

DS=10V, ID=6A, VGS=4.5V

-1.4

-

nC

C

iss

Input Capacitance

-

562

-

C

oss

Output Capacitance

-

106

-

C

rss

Reverse Transfer Capacitance

V

DS=8V, VGS=0V, f=1MHz

-75

-

pF

t

d(on)

Turn-on Delay Time

-

8.1

-

t

r

Turn-on Rise Time

-

9.95

-

t

d(off)

Turn-off Delay Time

-

21.85

-

t

f

Turn-off Fall Time

V

DD=10V, ID=1A, VGS=4.5V

R

GEN=6Ω

-5.35

-

ns

• Drain-Source Diode Characteristics

I

S

Maximum Diode Forward Current

-

1.7

A

V

SD

Drain-Source Diode Forward Voltage

V

GS=0V, IS=1.7A

-

1.2

V

Note: Pulse Test: Pulse Width

≤300us, Duty Cycle≤2%

G

S

D

R

D

V

DD

V

OUT

V

IN

R

G

V

GEN

Switching

Test Circuit

t

d(on)

t

on

t

r

90%

10%

50%

10%

Input, V

IN

Output, V

OUT

t

d(off)

t

off

t

f

90%

10%

Inverted

90%

50%

Pulse Width

Switching

Waveforms

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