MRF5S21130SR3 datasheet(5/12 Pages) MOTOROLA

Part #	MRF5S21130SR3

Description	The RF MOSFET Line RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFETs

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Manufacturer	MOTOROLA [Motorola, Inc]

Direct Link	http://www.freescale.com

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MRF5S21130 MRF5S21130R3 MRF5S21130S MRF5S21130SR3

MOTOROLA RF DEVICE DATA

TYPICAL CHARACTERISTICS

η

2220

2060

IRL

Gps

ACPR

IM3

f, FREQUENCY (MHz)

Figure 3. 2–Carrier W–CDMA Broadband Performance

-30

-10

-15

-20

-25

VDD = 28 Vdc, Pout = 28 W (Avg.), IDQ = 1200 mA

2-Carrier W-CDMA, 10 MHz Carrier Spacing,

3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB

@ 0.01% Probability (CCDF)

2200

2180

2160

2140

2120

2100

2080

6

14

13

12

11

10

9

8

7

-44

35

30

25

20

-28

-32

-36

-40

1000

11

15

1

IDQ = 1600 mA

1400 mA

Pout, OUTPUT POWER (WATTS) PEP

Figure 4. Two–Tone Power Gain versus

Output Power

VDD = 28 Vdc

f1 = 2135 MHz, f2 = 2145 MHz

Two-Tone Measurement, 10 MHz Tone Spacing

800 mA

1200 mA

1000 mA

10

100

14.5

14

13.5

13

12.5

12

11.5

1000

-65

-25

1

Pout, OUTPUT POWER (WATTS) PEP

Figure 5. Third Order Intermodulation Distortion

versus Output Power

100

10

-30

-35

-40

-45

-50

-55

-60

1000 mA

800 mA

IDQ = 1600 mA

1200 mA

1400 mA

VDD = 28 Vdc

f1 = 2135 MHz,

f2 = 2145 MHz

Two-Tone Measurement,

10 MHz Tone Spacing

100

-60

-25

0.1

TWO-TONE SPACING (MHz)

Figure 6. Intermodulation Distortion Products

versus Tone Spacing

110

-30

-35

-40

-45

-50

-55

50

58

35

Ideal

P1dB = 52.5 dBm (178 W)

Actual

Pin, INPUT POWER (dBm)

Figure 7. Pulse CW Output Power versus

Input Power

VDD = 28 Vdc, IDQ = 1200 mA

Pulsed CW, 5 µsec(on), 1 msec(off)

Center Frequency = 2140 MHz

P3dB = 53.02 dBm (200.5 W)

57

56

55

54

53

52

51

37

39

41

43

45

VDD = 28 Vdc, Pout = 130 W (PEP), IDQ = 1200 mA

Two-Tone Measurements, Center Frequency = 2140 MHz

3rd Order

7th Order

5th Order

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MRF5S21130SR3 Datasheet(PDF) 5 Page - Motorola, Inc

MRF5S21130SR3 Datasheet(HTML) 5 Page - Motorola, Inc

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