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AS4C4M4F0-50TI Datasheet(PDF) 1 Page - Alliance Semiconductor Corporation

Part # AS4C4M4F0-50TI
Description  5V 4M횞4 CMOS DRAM (Fast Page mode)
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Manufacturer  ALSC [Alliance Semiconductor Corporation]
Direct Link  https://www.alliancememory.com
Logo ALSC - Alliance Semiconductor Corporation

AS4C4M4F0-50TI Datasheet(HTML) 1 Page - Alliance Semiconductor Corporation

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Copyright © Alliance Semiconductor. All rights reserved.
®
AS4C4M4F0
AS4C4M4F1
5V 4M×4 CMOS DRAM (Fast Page mode)
4/11/01; v.0.9
Alliance Semiconductor
P. 1 of 18
Features
• Organization: 4,194,304 words × 4 bits
• High speed
- 50/60 ns RAS access time
- 25/30 ns column address access time
- 12/15 ns CAS access time
• Low power consumption
- Active:
908 mW max
- Standby: 5.5 mW max, CMOS I/O
•Fast page mode
•Refresh
- 4096 refresh cycles, 64 ms refresh interval for
AS4C4M4F0
- 2048 refresh cycles, 32 ms refresh interval for
AS4C4M4F1
-RAS-only or CAS-before-RAS refresh or self-refresh
• TTL-compatible, three-state I/O
• JEDEC standard package
- 300 mil, 24/26-pin SOJ
- 300 mil, 24/26-pin TSOP
• Latch-up current
≥ 200 mA
• ESD protection
≥ 2000 mV
• Industrial and commercial temperature available
Pin arrangement
A8
A7
A6
A5
A4
A10
A0
A1
A2
A3
VCC
GND
GND
I/O3
I/O2
CAS
OE
VCC
I/O0
I/O1
WE
RAS
1
2
3
4
5
26
25
24
23
22
*NC/A11
A9
621
8
9
10
11
18
17
16
15
14
12
SOJ
A8
A7
A6
A5
A4
A10
A0
A1
A2
A3
VCC
GND
GND
I/O3
I/O2
CAS
OE
VCC
I/O0
I/O1
WE
RAS
1
2
3
4
5
*NC/A11
A9
6
TSOP
*NC on 2K refresh version; A11 on 4K refresh version
13
19
Pin designation
Pin(s)
Description
A0 to A11
Address inputs
RAS
Row address strobe
CAS
Column address strobe
WE
Write enable
I/O0 to I/O3
Input/output
OE
Output enable
VCC
Power
GND
Ground
Selection guide
Symbol
AS4C4M4F0-50
AS4C4M4F1-50
AS4C4M4F0-60
AS4C4M4F1-60
Unit
Maximum RAS access time
tRAC
50
60
ns
Maximum column address access time
tCAA
25
30
ns
Maximum CAS access time
tCAC
12
15
ns
Maximum output enable (OE) access time
tOEA
13
15
ns
Minimum read or write cycle time
tRC
85
100
ns
Minimum fast page mode cycle time
tPC
25
30
ns
Maximum operating current
ICC1
135
120
mA
Maximum CMOS standby current
ICC5
1.0
1.0
mA
8
9
10
11
12
13
18
17
16
15
14
19
26
25
24
23
22
21


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