HSD32M64F8VA-12 datasheet(6/11 Pages) HANBIT

Part #	HSD32M64F8VA-12

Description	Synchronous DRAM Module, 256Mbyte ( 32M x 64-Bit ) SMM based on 32Mx8, 4Banks, 8K Ref., 3.3V

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Manufacturer	HANBIT [Hanbit Electronics Co.,Ltd]

Direct Link	http://www.hbe.co.kr

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HANBit

HSD32M64F8V/VA

URL:www.hbe.co.kr

HANBit Electronics Co.,Ltd.

REV.1.0 (August.2002)

6

AC OPERATING TEST CONDITIONS

(vcc = 3.3V

± 0.3V, TA = 0 to 70° C)

PARAMETER

Value

UNIT

AC Input levels (Vih/Vil)

2.4/0.4

V

Input timing measurement reference level

1.4

V

Input rise and fall time

tr/tf = 1/1

ns

Output timing measurement reference level

1.4

V

Output load condition

See Fig. 2

OPERATING AC PARAMETER

(AC operating conditions unless otherwise noted)

VERSION

PARAMETER

SYMBOL

-13

-12

-10

-10L

UNIT

NOTE

Row active to row active delay

tRRD(min)

15

16

20

ns

1

RAS to CAS delay

tRP(min)

20

ns

1

Row precharge time

tRP(min)

20

ns

1

tRAS(min)

45

48

50

ns

1

Row active time

tRAS(max)

100

ns

Row cycle time

tRC(min)

65

68

70

ns

1

Last data in to row precharge

tRDL(min)

2

CLK

2.5

Last data in to Active delay

tDAL(min)

2 CLK + 20 ns

-

5

Last data in to new col. address delay

tCDL(min)

1

CLK

2

Last data in to burst stop

tBDL(min)

1

CLK

2

Col. address to col. address delay

tCCD(min)

1

CLK

3

CAS latency=3

2

Number of valid output data

CAS latency=2

-

1

ea

4

+3.3V

1200

Ω

870

Ω

50pF*

DOUT

Vtt=1.4V

50

Ω

50pF

DOUT

Z0=50

Ω

VOH (DC) = 2.4V, IOH = -2mA

VOL (DC) = 0.4V, IOL = 2mA

(Fig. 1) DC output load circuit

(Fig. 2) AC output load circuit

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