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UT7C139C55GPX Datasheet(PDF) 10 Page - Aeroflex Circuit Technology |
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UT7C139C55GPX Datasheet(HTML) 10 Page - Aeroflex Circuit Technology |
10 / 21 page 10 Address CE R/ W Data in OE Data out tWC tSCE tAW tPWE t HA tSA tSD tHZOE t LZOE DATA VALID HIGH IMPE DANCE HIGH IMPE DANCE tHD Assumptions: 1. The internal write time of memory is defined by the overlap of CE LOW and R/W LOW. Both signals must be LOW to initiate a write, and either signal can terminate a write by going HIGH. The data input set-up and hold timing should be referenced to the rising edge of the signal that terminates the write. 2. If OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tPWE or (tHZWE + tSD ) to allow the I/O drivers to turn off and data to be placed on the bus for the required t SD. If OE is HIGH during a R/W controlled write cycle (as in this exam- ple), this requirement does not apply and the write pulse can be as short as the specified tPWE. 3. R/W must be HIGH during all address transactions. Figure 4a. Write Cycle 1: OE Three-States Data I/Os (Either Port) |
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