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HX6408-ENM Datasheet(PDF) 4 Page - Honeywell Solid State Electronics Center |
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HX6408-ENM Datasheet(HTML) 4 Page - Honeywell Solid State Electronics Center |
4 / 11 page HX6408 Advanced Information 4 www.honeywell.com RADIATION HARDNESS RATINGS (1) Parameter Limits (2) Units Test Conditions Total Dose ≥3X10 5 ≥1X10 6 rad(SiO2) TA=25°C Transient Dose Rate Upset ≥1X10 10 rad(Si)/s Pulse width ≤50 ns VDD>3.6V, TA=25°C Transient Dose Rate Survivability ≥1X10 12 rad(Si)/s Pulse width ≤50 ns, X- ray,VDD=3.6V, TA=25°C Soft Error Rate <1X10 -10 Upsets/bit-day TA= 85°C, Adams 90% worst case environment Neutron Fluence ≥1X10 14 N/cm 2 1MeV equivalent energy, Unbiased, TA=25°C (1) Device will not latch up due to any of the specified radiation exposure conditions. (2) Operating conditions (unless otherwise specified): VDD=3.0V to 3.6V, TA=-55 oC to 125oC ABSOLUTE MAXIMUM RATINGS (1) Rating Symbol Parameter Min Max Units VDD Supply Voltage Range (2) -0.5 4.6 V VPIN Voltage on Any Pin (2) -0.5 VDD+0.5 V TSTORE Storage Temperature (Zero Bias) -65 150 °C TSOLDER Soldering Temperature (5 seconds) 270 °C PD Maximum Power Dissipation (3) 2.5 W IOUT DC or Average Output Current 25 mA VPROT EST Input Protection Voltage (4) 2000 V 36 Pin FP 2 ΘJC Thermal Resistance (Jct-to-Case) °C/W TJ Junction Temperature 175 °C (1) Stresses in excess of those listed above may result in permanent damage. These are stress ratings only, and operation at these levels is not implied. Frequent or extended exposure to absolute maximum conditions may affect device reliability. (2) Voltage referenced to VSS. (3) RAM power dissipation (IDDSB + IDDOP) plus RAM output driver power dissipation due to external loading must not exceed this specification. (4) Class 2 electrostatic discharge (ESD) input protection. Tested per MIL-STD-883, Method 3015 by DSEC certified lab. RECOMMENDED OPERATING CONDITIONS Description Symbol Parameter Min Typ Max Units VDD Supply Voltage (referenced to VSS) 3.0 3.3 3.6 V TA Ambient Temperature -55 25 125 °C VPIN Voltage on Any Pin (referenced to VSS) -0.3 VDD+0.3 V VDDRAMP VDD Turn on ramp time 50 ms |
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