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HX6408XVFN Datasheet(PDF) 6 Page - Honeywell Solid State Electronics Center |
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HX6408XVFN Datasheet(HTML) 6 Page - Honeywell Solid State Electronics Center |
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6 / 11 page  HX6408 Advanced Information 6 www.honeywell.com DATA RETENTION CHARACTERISTICS Worst Case (2) Symbol Parameter Typical (1) Min Max Units Test Conditions VDR Data Retention Voltage 2.0 V NCS=VDR VI=VDR or VSS IDR Data Retention Current 3 mA NCS=VDD=VDR VI=VRD or VSS (1) Typical operating conditions: TA=25°C, pre-radiation. (2) Worst case operating conditions: TA=-55°C to +125°C, post dose at 25°C TESTER EQUIVALENT LOAD CIRCUIT * CL = 5pf for TWQZ, TSHQZ, TPLQZ, and TGHQZ Tester AC Timing Characteristics Input Levels * VDD VSS Output Sense Levels VDD/2 VDD – 0.4V 0.4V High Z High Z (VDD/2) + 0.2V (VDD/2) - 0.2V High Z = VDD/2 * Input rise and fall times <5 ns. DUT Output Valid Low Output Valid High Output 1.9V 249 V1 V2 CL < 50 pf * |
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