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HFR130 Datasheet(PDF) 1 Page - EIC discrete Semiconductors

Part # HFR130
Description  HIGH VOLTAGE FAST RECOVERY RECTIFIERS
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Manufacturer  EIC [EIC discrete Semiconductors]
Direct Link  http://www.eicsemi.com
Logo EIC - EIC discrete Semiconductors

HFR130 Datasheet(HTML) 1 Page - EIC discrete Semiconductors

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HFR125 - HFR130
HIGH VOLTAGE
FAST RECOVERY RECTIFIERS
PRV : 2500 - 3000 Volts
Io : 250 mA.
FEATURES :
* High current capability
* High surge current capability
* High reliability
* Low reverse current
* Low forward voltage drop
* Fast switching for high efficiency
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight :
0.34 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25
°C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
HFR125
HFR130
UNIT
Maximum Repetitive Peak Reverse Voltage
VRRM
2500
3000
V
Maximum RMS Voltage
VRMS
1750
2100
V
Maximum DC Blocking Voltage
VDC
2500
3000
V
Maximum Average Forward Current
Ta = 50
°C
IF(AV)
250
mA
Maximum Peak Forward Surge Current
8.3ms Single half sine wave Superimposed
on rated load (JEDEC Method)
Maximum Peak Forward Voltage at IFM = 250 mA.
VF
5.0
7.0
V
Maximum DC Reverse Current
Ta = 25
°C
IR
1.0
µA
at Rated DC Blocking Voltage
Ta = 100
°C
IR(H)
20
µA
Maximum Reverse Recovery Time ( Note 1 )
Trr
250
200
ns
Junction Temperature Range
TJ
- 40 to + 150
°C
Storage Temperature Range
TSTG
- 40 to + 150
°C
Note :
( 1 ) Reverse Recovery Test Conditions : IF = 0.5 A, IR = 1.0 A, Irr = 0.25 A.
Page 1 of 2
Rev. 02 : March 24, 2005
RATING
IFSM
30
A
DO - 41
Dimensions in inches and ( millimeters )
1.00 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
0.205 (5.2)
0.166 (4.2)
1.00 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)


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