GBU4G datasheet(2/2 Pages) EIC

Part #	GBU4G

Description	SILICON BRIDGE RECTIFIERS

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Manufacturer	EIC [EIC discrete Semiconductors]

Direct Link	http://www.eicsemi.com

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RATING AND CHARACTERISTIC CURVES ( GBU4A THRU GBU4M )

FIG.1 - DERATING CURVE FOR OUTPUT

FIG.2 - MAXIMUM NON-REPETITIVE PEAK

RECTIFIED CURRENT

FORWARD SURGE CURRENT

PER BRIDGE ELEMENT

0

25

50

75

100

125

150

175

CASE TEMPERATURE, (

°C)

NUMBER OF CYCLES AT 60Hz

FIG.3 - TYPICAL FORWARD CHARACTERISTICS

FIG.4 - TYPICAL REVERSE CHARACTERISTICS

PER BRIDGE ELEMENT

FORWARD VOLTAGE, VOLTS

Page 2 of 2

Rev. 02 : March 25, 2005

4.0

3.0

2.0

1.0

100

10

1.0

120

0

90

60

30

0.1

10

80

0.01

1.0

0.1

100

140

0

20

40

60

120

PERCENT OF RATED REVERSE

VOLTAGE, (%)

T J = 25

°C

PULSE W IDTH = 300

µs

2% Duty Cycle

T J = 150

°C

Ta = 125

°C

Ta = 25

°C

5.0

150

10

20

60

1

2

4

6

40

100

1.2

1.4

1.8

0.4

0.6

0.8

1.0

1.6

100

Single Sine W ave

(JEDEC Method)

HEAT-SINK MOUNTING

1.6"X1.6"X0.06"

(4.0X4.0X0.15CM)Al. PLATE

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