HM5212805FLTD-A60 datasheet(8/63 Pages) HITACHI

Part #	HM5212805FLTD-A60

Description	128M LVTTL interface SDRAM 133 MHz/100 MHz 2-Mword X 16-bit X 4-bank/4-Mword X 8-bit X 4-bank PC/133, PC/100 SDRAM

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Manufacturer	HITACHI [Hitachi Semiconductor]

Direct Link	http://www.renesas.com/eng

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8 / 63 page

HM5212165F/HM5212805F-75/A60/B60

8

Command Operation

Command Truth Table

The SDRAM recognizes the following commands specified by the

CS, RAS, CAS, WE and address pins.

CKE

Command

Symbol

n - 1

n

CS

RAS CAS WE A12/A13 A10

A0

to A11

Ignore command

DESL

H

×

H

×××

×

No operation

NOP

H

×

L

HHH

××

×

Burst stop in full page

BST

H

×

L

HHL

××

×

Column address and read command READ

H

×

LH

L

H

V

L

V

Read with auto-precharge

READ A

H

×

LH

L

H

V

H

V

Column address and write command WRIT

H

×

LH

L

V

L

V

Write with auto-precharge

WRIT A

H

×

LH

L

V

H

V

Row address strobe and bank active ACTV

H

×

LL

H

V

Precharge select bank

PRE

H

×

LL

H

L

V

L

×

Precharge all bank

PALL

H

×

LL

H

L

×

H

×

Refresh

REF/SELF H

V

L

H

××

×

Mode register set

MRS

H

×

L

LLL

V

Note:

H: V

IH.

L: V

IL. ×: VIH or VIL.

V: Valid address input

Ignore command [DESL]: When this command is set (

CS is High), the SDRAM ignore command input at

the clock. However, the internal status is held.

No operation [NOP]: This command is not an execution command. However, the internal operations

continue.

Burst stop in full-page [BST]: This command stops a full-page burst operation (burst length = full-page

(512; HM5212165F, 1024; HM5212805F)), and is illegal otherwise. When data input/output is vompleted for

a full page of data, it automatically returns to the start address and input/output is preformed repeatedly.

Column address strobe and read command [READ]: This command starts a read operation. In addition,

the start address of burst read is determined by the column address (AY0 to AY8; HM5212165F, AY0 to

AY9; HM5212805F) and the bank select address (BS). After the read operation, the output buffer becomes

High-Z.

Read with auto-precharge [READ A]: This command automatically performs a precharge operation after a

burst read with a burst length of 1, 2, 4 or 8. When the burst length is full-page, this command is illegal.

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HM5212805FLTD-A60 Datasheet(PDF) 8 Page - Hitachi Semiconductor

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Similar Description - HM5212805FLTD-A60

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