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EM39LV088-70H Datasheet(PDF) 3 Page - ELAN Microelectronics Corp

Part # EM39LV088-70H
Description  8M Bits (1Mx8) Flash Memory
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Manufacturer  EMC [ELAN Microelectronics Corp]
Direct Link  http://www.emc.com.tw
Logo EMC - ELAN Microelectronics Corp

EM39LV088-70H Datasheet(HTML) 3 Page - ELAN Microelectronics Corp

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EM39LV088
8M Bits (1Mx8) Flash Memory
SPECIFICATION
This specification is subject to change without further notice. (04.09.2004 V1.0)
Page 3 of 22
Pin Description
Pin Name
Function
A0–A19
20 addresses
DQ7–DQ0
Data inputs/outputs
CE#
Chip enable
OE#
Output enable
WE#
Write enable
VDD
2.7-3.6 volt single power supply
VSS
Device ground
NC
Pin not connected internally
Table 1: Pin Description
Device Operation
The EM39LV088 uses Commands to initiate the memory operation functions. The
Commands are written to the device by asserting WE# Low while keeping CE# Low. The
address bus is latched on the falling edge of WE# or CE#, whichever occurs last. The data
bus is latched on the rising edge of WE# or CE#, whichever occurs first.
Read
The Read operation of the EM39LV088 is controlled by CE# and OE#. Both have to be Low
for the system to obtain data from the outputs. CE# is used for device selection. When CE#
is high, the chip is deselected and only standby power is consumed. OE# is the output
control and is used to gate data from the output pins. The data bus is in high impedance state
when either CE# or OE# is high. Refer to the Read Cycle Timing Diagram in Figure 1 for
further details.
Byte Program
The EM39LV088 is programmed on a byte-by-byte basis. Before programming, the sector
where the byte is located; must be erased completely. The Program operation is
accomplished in three steps:
The first step is a three-byte load sequence for Software Data Protection.
The second step is to load byte address and byte data. During the Byte Program
operation, the addresses are latched on the falling edge of either CE# or WE#, whichever
occurs last; and the data is latched on the rising edge of either CE# or WE#, whichever
occurs first.
The third step is the internal Program operation which is initiated after the rising edge of
the fourth WE# or CE#, whichever occurs first. The Program operation, once initiated,
will be completed within 20 µs. See Figures 2 and 3 for WE# and CE# controlled
Program operation timing diagrams respectively and Figure 12 for flowchart.


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