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HMS25632Z8 Datasheet(PDF) 6 Page - Hanbit Electronics Co.,Ltd |
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HMS25632Z8 Datasheet(HTML) 6 Page - Hanbit Electronics Co.,Ltd |
6 / 9 page HANBit HMS25632M8G/Z8 HANBit Electronics Co.,Ltd. 6 TIMING WAVEFORM OF READ CYCLE ( /CE Controlled ) Notes (Read Cycle) 1. /WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to first transition address. 3. tHZ and tOHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or VOL levels. 4. At any given temperature and voltage condition, tHZ (max.) is less than tLZ (min.) both for a given device and from device to device. 5. Transition is measured ± 200mV from steady state voltage with Load (B). This parameter is sampled and not 100% tested. 6. Device is continuously selected with /CE = VIL. 7. Address valid prior to coincident with /CE transition low. TIMING WAVEFORM OF WRITE CYCLE (/OE = Clock ) tAA tCO tLZ(4,5 ) High-Z lSB 50% 50% tPD Address /CE /OE Data Out Vcc Supply Current tRC tPU lCC tOE tOLZ tOH tOHZ tHZ(3,4,5) tWC Address /OE /CE /WE Data In Data Out tAW tWR(5) tCW(3) tAS(4) tWP(2) tDW tDH High-Z tOHZ(6) High-Z Data Valid Data Valid |
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